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Millimeter Waves, 2008. GSMM 2008. Global Symposium on

Date 21-24 April 2008

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Displaying Results 1 - 25 of 149
  • 2008 Global Symposium on Millimeter Waves Proceeding

    Publication Year: 2008 , Page(s): 1
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  • [Front cover]

    Publication Year: 2008 , Page(s): C1
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  • Schedule for ICMMT2008/GSMM2008

    Publication Year: 2008 , Page(s): 1
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  • 2008 Global Symposium on Millimeter Waves Proceeding

    Publication Year: 2008 , Page(s): 1
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  • [Copyright notice]

    Publication Year: 2008 , Page(s): 1
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  • Table of contents

    Publication Year: 2008 , Page(s): 1
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  • Message from the Conference Chairs

    Publication Year: 2008 , Page(s): 1
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  • GSMM2008 Committee Officers

    Publication Year: 2008 , Page(s): 1
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  • International Steering Committee Members

    Publication Year: 2008 , Page(s): 1
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  • GSMM2008 Technical Program Committee Members

    Publication Year: 2008 , Page(s): 1 - 3
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  • GSMM2008 Secretariat Staff

    Publication Year: 2008 , Page(s): 3
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  • GSMM2008 Online Support

    Publication Year: 2008 , Page(s): 3
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  • Keynote speeches

    Publication Year: 2008 , Page(s): 1 - 12
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (374 KB)  

    Provides an abstract for each of the keynote presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings. View full abstract»

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  • [Breaker page]

    Publication Year: 2008 , Page(s): 1
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  • Quasi-Millimeter-Wave UWB Bandpass Filter with Sharp Notch at Restricted Band

    Publication Year: 2008 , Page(s): 2 - 5
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1554 KB) |  | HTML iconHTML  

    This paper presents a bandpass filter for ultra-wideband (UWB) radio systems at quasi-millimeter-wave frequencies (22 - 29 GHz) with a sharp notch at the restricted band. The developed bandpass filters are based on edge-coupled line structure, and designed by using electromagnetic simulation software and fabricated using wet-etching process. The sharp notch at the restricted band is realized by in... View full abstract»

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  • Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT

    Publication Year: 2008 , Page(s): 6 - 9
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (4270 KB) |  | HTML iconHTML  

    In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess. The modified channel consists of the In0.53Ga0.47 As and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47 As, we have adopted the InP-composite channe... View full abstract»

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  • Two-Stage 94 GHz drive Amplifiers Using 0.1-μm Metamorphic HEMT Technology

    Publication Year: 2008 , Page(s): 10 - 13
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (3101 KB) |  | HTML iconHTML  

    In this paper, millimeter-wave 94 GHz drive amplifiers based on metamorphic high electron mobility transistors (MHEMTs) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 690 mA/mm and an extrinsic transconductance of 770mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequenc... View full abstract»

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  • Half Mode Substrate Integrated Waveguide Gunn Oscillator

    Publication Year: 2008 , Page(s): 14 - 16
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (3055 KB) |  | HTML iconHTML  

    Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by... View full abstract»

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  • Wet Chemical MESA Etching Using HCl-based and FeCl3 Light Sensitive Etchants for InP Gunn Diodes

    Publication Year: 2008 , Page(s): 17 - 20
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1531 KB) |  | HTML iconHTML  

    We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H3PO4 : H2O = 3:1:2), the other one was FeCl3 light sensitive etchant. It was shown that the fabricated diodes have the curren... View full abstract»

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  • Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method

    Publication Year: 2008 , Page(s): 21 - 24
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1411 KB) |  | HTML iconHTML  

    We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced. View full abstract»

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  • Integrated W-band GaAs MMIC Modules for Multi-Gigabit Wireless Communication Systems

    Publication Year: 2008 , Page(s): 25 - 28
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1306 KB) |  | HTML iconHTML  

    70-90 GHz integrated receive and transmit modules with sub-harmonic frequency translation were developed using a GaAs MMIC chip set. These have a reported -3 dB bandwidth above 9 GHz and 6 GHz respectively for the down-converter and up-converter. With a common 39.25 GHz LO frequency, the modules are well suited for the RF transceivers of full-duplex wireless communication systems operating in both... View full abstract»

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  • The Back Propagation Neural Network Model of Non-Periodic Defected Ground Structure

    Publication Year: 2008 , Page(s): 29 - 32
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (990 KB) |  | HTML iconHTML  

    Presently, electromagnetic field numerical value analysis methods such as finite difference time-domain (FDTD) method are generally used to calculate the DGS, although these methods are accurate, they are also computationally expensive. In this paper, a neural network model of a novel defected ground structure is established. Since the neural network model has the advantages of great precision and... View full abstract»

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  • A Low hase Noise Quadrature LC-VCO in 0.18-μm CMOS Technology

    Publication Year: 2008 , Page(s): 33 - 36
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (3024 KB) |  | HTML iconHTML  

    A 5.2-GHz quadrature LC voltage controlled oscillator (VCO) has been designed in a standard 0.18-mum CMOS process. Digitally controlled switch array is used in this design to achieve sufficient frequency tuning range and low phase noise. The oscillation frequency can be tuned from 5.03 GHz to 5.32 GHz through the 2-bit switch array. With the selection of an optimal on-chip inductor, the quadrature... View full abstract»

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  • Analysis of Second-Order LTCC Bandpass Filter with Two Finite Transmission Zeros

    Publication Year: 2008 , Page(s): 37 - 39
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2571 KB) |  | HTML iconHTML  

    The paper proposes a new Low-temperature co-fired ceramic (LTCC) bandpass filter, which can be used to provide two finite transmission zeros in the lower stopband. The coupled electromagnet of the two stepped-impedance resonators (SIRs) is improved by adding a coupling pad. A feedback capacitor between input and output is also used to realize transmission zero. An equivalent lumped circuit is deri... View full abstract»

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  • [Breaker page]

    Publication Year: 2008 , Page(s): 40
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