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2008 IEEE Workshop on Microelectronics and Electron Devices

Date 18-18 April 2008

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Displaying Results 1 - 23 of 23
  • [Front cover]

    Publication Year: 2008, Page(s): C1
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  • [Breaker page]

    Publication Year: 2008, Page(s): ii
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  • Table of contents

    Publication Year: 2008, Page(s): iii
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  • [Commentary]

    Publication Year: 2008, Page(s):v - vi
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  • Contributor listings

    Publication Year: 2008, Page(s): vii
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  • [Society related material]

    Publication Year: 2008, Page(s): ix
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  • Commentary: Trends, Challenges and Opportunities in Semiconductor Memory Technology Scaling

    Publication Year: 2008, Page(s): xii
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  • Talk: NAND Flash Memory Scaling - Key Challenges and Future Outlook

    Publication Year: 2008, Page(s): xiii
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    Summary form only given. NAND flash memory is the memory of choice in many of the handheld devices owing to the versatility of the NAND flash in terms of non-volatility, updateability, fast read/write throughput, large density, low cost, and high reliability. NAND flash bit area/density has scaled by >1000times in the past 10 years. However, there are several scaling issues - some physical and ... View full abstract»

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  • Invited Speaker: Dr. Vivek Subramanian [Printed electronics for low-cost tags and sensors CMOS Scaling]

    Publication Year: 2008
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    Summary form only given. Inferring a sequence of variables from observations is a prevalent task in a multitude of applications. However, in some nonlinear or non-Gaussian scenarios, traditional techniques such as Kalman filters (KFs) and particle filters (PFs) fail to provide satisfactory performance. Moreover, there is a lack of a unifying framework for the analysis and development of different ... View full abstract»

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  • [Commentary]

    Publication Year: 2008, Page(s): xv
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    Summary form only given. Self-aligned double patterning (SADP) is a new technique that can enable the scaling of memory devices in the face of a serious lithography roadblock.is the primary double patterning approach for flash memory, developed in part by Applied Materials, that is gaining rapid momentum due to its superior pattern (line width) control and because it allows chip makers to use thei... View full abstract»

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  • Commentary: NanoMEMS

    Publication Year: 2008, Page(s): xvi
    Cited by:  Papers (1)
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  • Commentary: Carbon-based Electrical Interconnect and Thermal Interface Materials

    Publication Year: 2008, Page(s):xviii - xix
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  • [Commentary]

    Publication Year: 2008, Page(s): xx
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (45 KB)

    First Page of the Article
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  • Table of contents

    Publication Year: 2008, Page(s): 3
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  • Design and Fabrication of a Meso-Scale Gyroscope

    Publication Year: 2008, Page(s):5 - 8
    Cited by:  Papers (1)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4614 KB) | HTML iconHTML

    The purpose of this work was to develop a low-cost gyroscope for general aviation. The work was supported by FAA to fulfill their goal of replacing all or part of ground based navigation for general aviation which could help to overcome the difficulties related to GPS failures. To achieve this goal researchers are focusing on MEMS technology. We propose a new design for the gyroscope which should ... View full abstract»

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  • Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET

    Publication Year: 2008, Page(s):9 - 11
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2084 KB) | HTML iconHTML

    Threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the first time. An approximate expression for these quantities is presented for the purpose of analytical calculations. The model has been verified against TCAD simulations. The characteristics of a recessed gate MOSFET is analysed using these models. View full abstract»

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  • Integrated Digital Control Scheme for Fully Integrated High Frequency DC-DC Power Converter

    Publication Year: 2008, Page(s):12 - 15
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    A digital control scheme for fully integrated high frequency DC-DC power converter is presented in this paper. A resonant converter current mode control algorithm uses a varactor-based control to obtain a regulated output voltage. Control algorithm is based on an accurate estimate of output voltage response and a state machine-based formulation. Employing a current-mode approach simplifies computa... View full abstract»

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  • Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References

    Publication Year: 2008, Page(s):16 - 19
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3774 KB) | HTML iconHTML

    This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use ... View full abstract»

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  • Static Frequency Divider with Enhanced Frequency Performance

    Publication Year: 2008, Page(s):20 - 21
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    This paper presents the design and measured results of a novel static frequency divider that operates at a frequency 28% higher than a current-mode logic (CML) divider. The frequency divider was designed and implemented in IBM's 0.5 mum SiGe BiCMOS technology with an fT of 47 GHz. The divider adds an additional delayed clock phase to a conventional CML- based divider. Measured results s... View full abstract»

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  • Nanoindentation measurements of silicon nitride films deposited using hexachlorodisilane as the si icon precursor

    Publication Year: 2008, Page(s):22 - 25
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    The mechanical properties of silicon nitride deposited using hexachlorodisilane (HCD) as the silicon precursor have been studied using nanoindentation. The hardness, elastic modulus and fracture resistance were found to be significantly lower for HCD nitride films than they are for nitride films deposited using dichlorosilane (DCS) as the silicon precursor. The addition of carbon to HCD nitride fi... View full abstract»

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  • Mechanism of Surface Bump Defect Formation in Phosphorus Doped Polysilicon-Silicon Nitride Film Stack

    Publication Year: 2008, Page(s):26 - 29
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    Formation of bump defect on the surface of silicon nitride film deposited on top of phosphorus doped amorphous silicon layer was studied. The bump defect formation was found to be caused by localized phosphorus segregation on polysilicon surface. Wet chemical treatment of silicon surface involving HF- H2O2 chemistries were found to reduce bump defect formation. View full abstract»

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  • [Six abstracts]

    Publication Year: 2008, Page(s):32 - 33
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    Provides an abstract for each of six presentations. View full abstract»

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  • Author index

    Publication Year: 2008, Page(s): 39
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