IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | Sign In

Author Search^beta | Advanced Search | Preferences | | More Search Options

Browse Conference Publications > VLSI Technology, 1981. Digest ...

VLSI Technology, 1981. Digest of Technical Papers. Symposium on

| Create Account

IEEE Account

Change Username/Password
Update Address

Purchase Details

Payment Options
Order History
Access Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical Interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

Please enter a valid username or password.

For Institutional Users:

More Search Options

VLSI Technology, 1981. Digest of Technical Papers. Symposium on

Date 9-11 Sept. 1981

Quick Links

Filter Results

You have selected:

You have selected:

Title History

[Front cover]

Contents

1981 Symposium on VLSI Technology Digest of Technical Papers [front cover]

Foreword: Welcome to the 1981 Symposium on VLSI Technology at Maui

1981 VLSI Symposium Committee

Optical Projection Lithography Status in 1981 and Trends for the Decade

Resolution and Overlay Precision of a 10 to 1 Step-and-Repeat Projection Printer for VLSI Circuit Fabrication

Deep UV Projection Lithography Using Novel Negative Resist

An Ideal Projection Photolithography

The Evaluation of a Single-Step Lift-off Process Using the Method of Response Surface Analysis

EB Direct Writing Technology for Micron and Sub-Micron Structure

An Ion Beam Exposure System for Mask Making

Limits to Scaling MOS Devices

An Asymmetric Effect of Short Channel MOSFETs

Characteristics of a Buried-Channel, Graded Drain with Punch-Through Stopper (BGP) MOS Device

Submicron MOSFET Structure for Minimizing Channel Hot-Electron Injection

CMOS Technologies for VLSI Circuits

A 2 μm Hi-CMOS II Technology

1 μm Mo Gate MOS Technology

A View of US-Japan Competition in Semiconductors

"Directions in Lithography"

The Potential of Bipolar Devices for VLSI

Bipolar Technologies for High Speed VLSIs

High Speed Performance of a Basic ECL Gate with 1.25 Micron Design Rule

Process Sensitivity of Depleted Base Bipolar Transistors (BSIT)

IEEE Account

Purchase Details

Profile Information

Need Help?