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2007 Digest of papers Microprocesses and Nanotechnology

5-8 Nov. 2007

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Displaying Results 1 - 25 of 279
  • [Front cover]

    Publication Year: 2007, Page(s): C1
    IEEE is not the copyright holder of this material | PDF file iconPDF (625 KB)
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  • 2007 International Microprocesses and Nanotechnology Conference

    Publication Year: 2007
    IEEE is not the copyright holder of this material | PDF file iconPDF (69 KB)
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  • [Copyright notice]

    Publication Year: 2007
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  • Preface

    Publication Year: 2007, Page(s): iii
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  • 2007 International Microprocesses and Nanotechnology Conference Committee Members

    Publication Year: 2007, Page(s):v - vi
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  • MNC 2006 Award

    Publication Year: 2007
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  • [Advertisement]

    Publication Year: 2007, Page(s): xii
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  • Table of contents

    Publication Year: 2007, Page(s):xiii - xxxii
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  • [Breaker page]

    Publication Year: 2007
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  • 20 years of Microprocesses and Nanotechinology Conference

    Publication Year: 2007, Page(s): 2
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (216 KB) | HTML iconHTML

    Summary form only given. The Microprocesses and Nanotechnology Conference (MNC) celebrates 20th anniversary this year. This paper presents the history and prospect of the MNC with looking back many papers presented at the conference. The MNC was established in 1988 for a conference discussing lithography and other micro-fabrication technologies for semiconductor industries in Asia, like the 3-beam... View full abstract»

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  • Nanoimprint (Technology, Tools, Applications and Commercialization) And New Technologies Beyond

    Publication Year: 2007, Page(s): 4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (877 KB) | HTML iconHTML

    Summary form only given. Since the proposal of nanoimprint lithography (NIL) as a low-cost high-throughput sub-10-nm manufacturing method in 1995, the field has been growing rapidly in research, applications and commercialization in the past 12 years. The talk will first address some advances in nanoimprint technology, tools, applications and commercialization, particularly, (a) NIL progresses in ... View full abstract»

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  • Silicon VLSI Device Technology and Nanoelectronics

    Publication Year: 2007, Page(s):6 - 7
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (942 KB) | HTML iconHTML

    The present status of silicon VLSI device technology and future trend of silicon nanoelectronics are discussed. The CMOS extension will continue to be the main technology and new other technologies will be merged into CMOS. The main technical approaches to the challenges above are, respectively, (a) improve the carrier transport properties by introducing new materials, (b) improve the electrostati... View full abstract»

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  • Resist Science and Kinetics

    Publication Year: 2007, Page(s): 8
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (57 KB) | HTML iconHTML

    Significant advances are continually being made in semiconductor device fabrication, especially in lithography. A key step in the lithography involves the definition of a circuit pattern into a resist. The economical operation of semiconductor device fabrication demands extremely high resist sensitivity. For the achievement of high sensitivity, the concept of chemical amplification is an indispens... View full abstract»

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  • Feasibility study of immersion system using high-index materials

    Publication Year: 2007, Page(s):10 - 11
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (746 KB) | HTML iconHTML

    In this paper, we discuss the feasibility of ArF immersion system using high-index materials. For the next generation of lithography, we focus on ArF immersion system using high-index materials. It is possible to increase the NA up to 1.45 using a high-index fluid (HIF) whose refractive index is about 1.65 as an immersion fluid. HIF materials have some advantages as higher transparency and lower e... View full abstract»

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  • Immersion for 40nm production with 1.35NA

    Publication Year: 2007, Page(s): 12
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (80 KB) | HTML iconHTML

    Summary form only given. Moving at impressive pace, immersion technology has entered volume manufacturing only 3 years after its technical feasibility had been proven. In 2006 Immersion lived up to its promise moving across the NA=1 barrier, with the shipment on 1.2NA exposure tools. Extending water immersion to its limit these tools are now followed by 1.35NA exposure tools for 40nm resolution be... View full abstract»

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  • Latest results from the hyper - NA immersion scanners

    Publication Year: 2007, Page(s):14 - 15
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (749 KB) | HTML iconHTML

    Intensive immersion scanner development has enabled resolution of the main technical challenges that had been considered potential show-stoppers for immersion lithography. Leading-edge immersion scanners, such as the Nikon NSR-S610C, deliver not only the 1.30 numerical aperture required for 45 nm half-pitch production, but also provide overlay accuracy, defectivity comparable to dry exposure tools... View full abstract»

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  • Reaction mechanism of EUV resists

    Publication Year: 2007, Page(s):16 - 17
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (156 KB) | HTML iconHTML

    In this paper, the deprotection kinetics in polyphenol-molecular resist and phenol-resin resist materials induced by the EUV exposure and the vacuum effect on the dissolution during the development was studied. View full abstract»

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  • Three-dimensional Nanomechanical Device Fabrication by FIB-CVD

    Publication Year: 2007, Page(s):18 - 19
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1137 KB) | HTML iconHTML

    Three-dimensional nanostructure fabrication has been demonstrated by 30 keV Ga+ FIB-CVD using a phenanthrene (C14H10) source as a precursor. The characterization of deposited film on a silicon substrate was performed by a transmission microscope and Raman spectra. This result indicates that the deposition film is a diamondlike amorphous carbon (DLC) which have attr... View full abstract»

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  • Chemical Force AFM with CNT Tips

    Publication Year: 2007, Page(s):20 - 21
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (693 KB) | HTML iconHTML

    In this paper, we focus on preparation of CNT-AFM tips, their chemical modification, and their application. The authors have been trying to use a carbon nanotube (CNT) as an AFM probe tip because of its nanoscale dimension, mechanical and chemical robustness, high aspect ratio, and so on. The first step toward this issue, we have prepared the checker pattern surface by self-assembling molecules of... View full abstract»

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  • Emission Property and Structure of an Ultra Sharp Tungsten Probe

    Publication Year: 2007, Page(s):22 - 23
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (863 KB) | HTML iconHTML

    It was previously reported that an ultra sharp emitter can be fabricated during field emissions from a multi-walled carbon nanotube embedded in a conventional electrolytic polished tungsten probe, where the Joule heating of the emission current softens the tungsten tip, and coulomb attraction to the nanotube finery pulled from the tungsten tip resulted in an ultra sharp apex of the tungsten probe,... View full abstract»

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  • Development status of Nikon EUV exposure tools

    Publication Year: 2007, Page(s): 24
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (162 KB) | HTML iconHTML

    Extreme ultra violet lithography (EUVL) is widely regarded as the lithography technology to succeed optical lithography. In this paper, updated development status of Nikon's EUVL process development tool named EUV1 is presented. View full abstract»

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  • Canon's Development Status of EUVL Technologies

    Publication Year: 2007, Page(s):26 - 27
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (949 KB) | HTML iconHTML

    Canon has been developing the EUVL technologies for more than ten years. The current development status of EUVL technologies is presented. The small field exposure tool (SFET) is positioned as a cornerstone of the manufacturing technologies for the EUVL beta tool. LPP source and the DPP source are the most expecting methods for the EUVL beta tools. View full abstract»

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  • Results from Alpha Demo and an update on the realization of EUV lithography

    Publication Year: 2007, Page(s):28 - 29
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (472 KB) | HTML iconHTML

    EUV Lithography is targeted for use for sub 40 nm critical level imaging, and the Alpha Demo Tools developed by ASML will be used to help manage the technological risks involved in readying this technology for commercialization. Our work on EUVL has included the design and implementation of key lithography system modules, creating those that are unique to EUVL and combining them with others that b... View full abstract»

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  • Laser produced plasma light source for HVM-EUVL

    Publication Year: 2007, Page(s):30 - 31
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (457 KB) | HTML iconHTML

    A major technical challenge of an extreme ultraviolet (EUV) light source for microlithography at 13.5 nm is the in-band power requirement of more than 115 W at the intermediate focus. The solution for HVM EUV lithography is a laser produced plasma light source with a cost effective CO2 drive laser and a high conversion efficiency Sn target. To demonstrate this, a LPP source is developed... View full abstract»

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  • Development of a LPP EUV light source for below-32nm Node Lithography

    Publication Year: 2007, Page(s):32 - 33
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (456 KB) | HTML iconHTML

    A comprehensive review of the development activities being undertaken at Cymer in the development of a CO2 laser produced plasma (LPP) light source for EUV lithography is provided. A new and effective debris mitigation technique which greatly reduces the Ion Flux generated during exposure is also demonstrated. View full abstract»

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