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2006 Conference on Optoelectronic and Microelectronic Materials and Devices

Date 6-8 Dec. 2006

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  • [Front cover]

    Publication Year: 2006, Page(s): C1
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  • [Cover]

    Publication Year: 2006, Page(s): 1
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  • Table of contents

    Publication Year: 2006, Page(s): 1
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  • Preface

    Publication Year: 2006, Page(s):1 - 2
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  • Contributor listings

    Publication Year: 2006, Page(s): 1
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  • Contributor listings

    Publication Year: 2006, Page(s): 1
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  • Staff or Society Listings

    Publication Year: 2006, Page(s): 1
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  • Table of contents

    Publication Year: 2006, Page(s): 1
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  • Table of contents

    Publication Year: 2006, Page(s):1 - 15
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  • Author index

    Publication Year: 2006, Page(s):1 - 8
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  • Author index

    Publication Year: 2006, Page(s):1 - 50
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  • [Teaser abstract]

    Publication Year: 2006
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (243 KB)

    Presents abstracts of ipresentations from the conference proceedings. View full abstract»

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  • [Breaker page]

    Publication Year: 2006, Page(s): 1
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  • [Teaser abstract]

    Publication Year: 2006
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (152 KB)

    Presents abstracts of ipresentations from the conference proceedings. View full abstract»

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  • Information for authors

    Publication Year: 2006, Page(s): 1
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  • Information for authors

    Publication Year: 2006, Page(s):1 - 3
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  • Information for authors

    Publication Year: 2006, Page(s): 1
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  • Electro-thermal simulation of semiconductor devices and hybrid circuits

    Publication Year: 2006, Page(s):1 - 6
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4026 KB) | HTML iconHTML

    This works describes the use of electro-thermal numerical simulations for the design, modeling, and reliability evaluation of semiconductor devices and electronic circuits. Examples at the device level focus on 2D and 3D simulations of GaAs-based HFETs and HBTs, while a case study of hybrid high-power DC/DC converters is shown to illustrate the possibilities and challenges of thermal simulation at... View full abstract»

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  • External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes

    Publication Year: 2006, Page(s):7 - 10
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (140 KB) | HTML iconHTML

    Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the det... View full abstract»

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  • Characterisation of Electron Transport in MBE Grown Indium Nitride

    Publication Year: 2006, Page(s):11 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (236 KB) | HTML iconHTML

    Transport properties of multiple electron species in two samples of indium nitride (InN) grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity data were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of two electron species, attributed to the bulk and a surface accumulation layer. While the properties o... View full abstract»

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  • Spectral Properties and dynamics of carriers in Si quantum dots in SiN matrices

    Publication Year: 2006, Page(s):15 - 17
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (199 KB) | HTML iconHTML

    Femtosecond two-color spectrally-resolved nonlinear spectroscopy is used to study the dynamics of excited carriers in Si quantum dot structures embedded in SiN. Ultrashort population relaxation times of < 400 fs and ~ 6-10 ps are measured and discussed in the context of the different contributions from zero-phonon and transverse optical and transverse acoustic phonon-assisted transitions. View full abstract»

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  • Blue InGaN/GaN-based Quantum Electroabsorption Modulators

    Publication Year: 2006, Page(s):18 - 20
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (211 KB) | HTML iconHTML

    We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ~5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ~6000 cm-1 below the band edge at highly transmissive, blue region (at lambdapeak=424 nm) with a 6 V sw... View full abstract»

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  • White Light Generation with CdSe/ZnS Core-Shell Nanocrystals and InGaN/GaN Light Emitting Diodes

    Publication Year: 2006, Page(s):21 - 23
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2557 KB) | HTML iconHTML

    We present hybrid white light sources that integrate CdSe/ZnS core-shell nanocrystals on blue InGaN/GaN light emitting diodes (LED). We report on the demonstrations of white light generation using yellow nanocrystals (lambdaPL=580 nm) hybridized on a blue LED (lambdaEL=440 nm) with tristimulus coordinates of x=0.37 and y=0.25, correlated color temperature of Tc=269... View full abstract»

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  • Coherent dynamics of excitons and biexcitons in intermixed ZnO/Zn1-xMgxO quantum wells by ion implantation

    Publication Year: 2006, Page(s):24 - 27
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (265 KB) | HTML iconHTML

    We have performed one and two colour, spectrally resolved four-wave mixing (FWM) experiments on a series of ZnO/Zn1-xMgxO quantum wells with different oxygen ion implantation doses. The results show that at room temperature and with resonant excitation, excitonic coherences are maintained beyond the duration of the laser pulse. A transient signal observed at negative delays i... View full abstract»

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  • Possible Approaches to High Efficiency Thermoelectric Devices

    Publication Year: 2006, Page(s):28 - 31
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (507 KB) | HTML iconHTML

    Thermoelectric power generators can convert thermal energy directly to electrical energy. These devices are maintenance free since they do not have mechanical moving parts. Importantly, waste heat, for example, from thermal plants or the exhaust system of automobiles, can be converted into electricity, thus has potential to increase overall energy efficiency and reduce greenhouse gas emissions. Cu... View full abstract»

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