Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Date 15-19 April 2007
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Displaying Results 1 - 25 of 172
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[Front cover]
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PDF (68 KB)
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2007 International Reliability Physics Symposium
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PDF (61 KB)
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[Copyright notice]
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PDF (61 KB)
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Preface
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PDF (99 KB)
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Table of contents
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PDF (212 KB)
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[Future events]
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PDF (341 KB)
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Call for Papers and Call for Posters
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PDF (120 KB)
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On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?
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PDF (415 KB)
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Quantitative Analysis of Random Telegraph Signals as Fluctuations of Threshold Voltages in Scaled Flash Memory Cells
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PDF (7061 KB)
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New Understanding on the Breakdown of High-K Dielectric Stacks using Multi-Vibrational Hydrogen Release Model
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PDF (392 KB)
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Defects Generation in SIO2/HFO2 Studied with Variable TCHARGE-TDIScharge Charge Pumping (VT2CP)
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PDF (1031 KB)
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In Depth Analysis of VT Instabilities in HFO2 Technologies by Charge Pumping Measurements and Electrical Modeling
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PDF (6571 KB)
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Kinetic Analysis of X-Ray Irradiation Induced Static Refresh Failure Mechanism in DRAM
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PDF (504 KB)
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Macro-Model for Post-Breakdown 90NM and 130NM Transistors and its Applications in Predicting Chip-Level Function Failure after ESD-CDM Events
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PDF (830 KB)
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Degradation Mechanisms in CMOS Power Amplifiers Subject to Radio-Frequency Stress and Comparison to the DC Case
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PDF (1835 KB)
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On the Physics of Failure in the Case of Moisture Induced Delamination in Plastic Encapsulated Microelectronic Devices
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PDF (521 KB)
