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Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on

Date 20-20 April 2007

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  • [Front cover]

    Publication Year: 2007 , Page(s): C1
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  • [Breaker page]

    Publication Year: 2007 , Page(s): nil1
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  • [Breaker page]

    Publication Year: 2007 , Page(s): i
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  • [Breaker page]

    Publication Year: 2007 , Page(s): ii
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  • [Society related material]

    Publication Year: 2007 , Page(s): iii - iv
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  • Contributor listings

    Publication Year: 2007 , Page(s): v
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  • [Society related material]

    Publication Year: 2007 , Page(s): vi
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  • Table of contents

    Publication Year: 2007 , Page(s): vii - viii
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  • [Breaker page]

    Publication Year: 2007 , Page(s): 1
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  • [Commentary]

    Publication Year: 2007 , Page(s): 3
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  • Invited Speaker: Dr. M. Jamal Deen [Noise Issues in CMOS Devices and Circuits]

    Publication Year: 2007
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (169 KB)  

    Summary form only given. In this presentation we first describe a framework, called TARDIS (Timely and Reliable Distributed Information Systems), for the architectural design of dependable real-time systems. TARDIS ensures that nonfunctional issues are introduced into the design process as early as possible. It avoids overwhelming the designer with detail by introducing only essential information,... View full abstract»

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  • [Advertisements]

    Publication Year: 2007 , Page(s): 6
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  • [Advertisements]

    Publication Year: 2007 , Page(s): 7
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  • [Advertisements]

    Publication Year: 2007 , Page(s): 8
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  • [Breaker page]

    Publication Year: 2007 , Page(s): 9
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  • [Commentary]

    Publication Year: 2007 , Page(s): 11
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  • [Commentary]

    Publication Year: 2007 , Page(s): 12
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  • [Commentary]

    Publication Year: 2007 , Page(s): 13
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  • [Breaker page]

    Publication Year: 2007 , Page(s): 15 - 16
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  • Modeling the Reliability of Metal-Insulator-Metal Capacitors (MIMC) in Analog Devices

    Publication Year: 2007 , Page(s): 17 - 20
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1821 KB) |  | HTML iconHTML  

    Metal-Insulator-Metal (MIM) capacitors are used in many modern analog circuits due to its high capacitance per unit area, low parasitic capacitance and low 1st and 2nd order coefficients [1]. These products require high reliability that is determined by MIMC area, applied voltage and operating temperature. It has been reported [2] that dielectric film thinning is an important mechanism for MIMC br... View full abstract»

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  • 1/f Noise and RTS(Random Telegraph Signal) Errors in Sense Amplifiers

    Publication Year: 2007 , Page(s): 21 - 22
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (145 KB) |  | HTML iconHTML  

    The modeling of noise in the frequency domain gives the mean square noise current of a transistor as a function of frequency. RTS in nanoscale devices is easiest modeled as an instantaneous fluctuation in threshold voltage due to the capture and emission of traps. The capture and emission of a single electron at an interface or oxide trap in a nanoscale NMOS transistor is equivalent to a discrete ... View full abstract»

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  • Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)

    Publication Year: 2007 , Page(s): 23 - 24
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1797 KB) |  | HTML iconHTML  

    An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a dis... View full abstract»

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  • A Silicon-on-Insulator Transistor Resistant to Substrate Potential

    Publication Year: 2007 , Page(s): 25 - 26
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1948 KB) |  | HTML iconHTML  

    A silicon-on-insulator transistor that is resistant to substrate potential is demonstrated. The 0.18 ¿m independently double-gated Flexfet transistor with implanted JFET bottom gate shows little change in either threshold voltage or leakage current across a wide range of substrate potentials. Threshold voltage shifts (¿Vt) and changes in leakage current for both nMOS and pMOS transistors are ana... View full abstract»

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  • Modeling the stress-induced leakage current origin from antisite defects in MOSFETs

    Publication Year: 2007 , Page(s): 27 - 28
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1045 KB) |  | HTML iconHTML  

    First-principles electronic structure simulations shows that the formation energy of the antisite defects in SiO2 is less than that of oxygen vacancy. On the basis of the analysis of the electronic structure, the defect assisted tunneling was calculated and it results show that such defects could be an origin of the stress-induced leakage current in MOSFETs. View full abstract»

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  • [Breaker page]

    Publication Year: 2007 , Page(s): 29 - 30
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