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Reliability Physics Symposium, 1975. 13th Annual

Date 1-3 April 1975

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Displaying Results 1 - 25 of 44
  • [Covers]

    Publication Year: 1975, Page(s): C1
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    Freely Available from IEEE
  • Management Committee

    Publication Year: 1975, Page(s): ii
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  • Copyright page

    Publication Year: 1975, Page(s): ii
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    Freely Available from IEEE
  • Table of contents

    Publication Year: 1975, Page(s):iii - vii
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    Freely Available from IEEE
  • P-Channel Rewritable Avalanche Injection Device (RAID) Operation and Degradation Mechanisms

    Publication Year: 1975, Page(s):1 - 5
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4470 KB)

    To implement an electrically rewritable device for Read Mostly Memory applications, the structure of the FAMOS device is modified by incorporating an additional metal gate on top of the floating polysilicon gate and separated from it by a specially grown thermal oxide. Electrical erasure is accomplished by applying a positive voltage pulse to the metal gate. The "write" voltage has been lowered by... View full abstract»

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  • Degradation Mechanisms in Rewritable N-Channel FAMOS Devices

    Publication Year: 1975, Page(s):6 - 9
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2632 KB)

    Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed. View full abstract»

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  • A Study of the Dielectric Breakdown of Thermally Grown SiO2 by the Self-Quenching Technique

    Publication Year: 1975, Page(s):10 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (6346 KB)

    The dielectric breakdown of SiO2 films thermally grown on (100) silicon substrates was studied by the self-quenching technique, using thin aluminum field plates. The breakdown regions show distinct differences among the four possible combinations of substrate type and polarity of applied voltage. With p-type substrate and positive field-plate polarity, an anisotropy is observed which reflects the ... View full abstract»

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  • Sodium Ions at Defect Sites at SiO2/Si Interfaces as Determined by X-Ray Photoelectron Spectroscopy

    Publication Year: 1975, Page(s):15 - 25
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (12930 KB)

    X-ray photoelectron spectroscopy (XPS) is described in its application as a probe for studying defects such as sodium in SiO2 films. A general description is given of key experimental methods in XPS. New techniques are described for applying and monitoring a fixed bias at the surface of the oxide during the XPS measurement. These methods are shown capable of detecting extremely small Na and Cu con... View full abstract»

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  • Tunnel Injection into Gate Oxide Traps

    Publication Year: 1975, Page(s):26 - 33
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (8354 KB)

    An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co60 irradiation. The results are related to long-term drift of threshold voltage. View full abstract»

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  • SOS Island Edge Profiles Following Oxidation

    Publication Year: 1975, Page(s):34 - 37
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4953 KB)

    A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a " V"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliabilit... View full abstract»

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  • Rectangular Flat-Pack Lids Under External Pressure: Formulas for Screening and Design

    Publication Year: 1975, Page(s):38 - 47
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (10563 KB)

    Formulas are presented for the maximum tensile stresses in the lid seal and the maximum lid deflections of a rectangular flat-pack under external pressure. These formulas can facilitate (a) the proper design of the package so that it will retain its hermeticity under a given screening pressure and (b) the selection of a proper pressure to use in the hermeticity screening of an already designed pac... View full abstract»

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  • Miniature Moisture Sensors for In-Package Use by the Microelectronics Industry

    Publication Year: 1975, Page(s):48 - 52
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (7975 KB)

    First Page of the Article
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  • A Test of Parylene as a Protective System for Microcircuitry

    Publication Year: 1975, Page(s):53 - 57
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (6597 KB)

    Parylene has been suggested for use and, in some cases, is used as a protective system for electronic components and assemblies, such as microcircuits. unfortunately, the amount of environmental test data for such parylene-protected components is quite limited and, to the authors' knowledge, almost no long-term test data exists. The principal objective of the test program reported in this paper wa... View full abstract»

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  • The Degradation of Bonding Wires and Sealing Glasses with Extended Thermal Cycling

    Publication Year: 1975, Page(s):58 - 69
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (10326 KB)

    The purpose of this investigation was to determine if there was a detrimental effect on internal bonded wires of ceramic dual-in-line and ceramic flat packages, which had been subjected to thermal cycling for up to 1000 cycles. Several manufacturers' parts were used - three ceramic dual-in-line packages (CDIP) and two flat packages. All parts were stressed to MIL-STD-883, Method 1010, Condition C ... View full abstract»

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  • Susceptibility of Microweids in Hybrid Microcincuits to Corrosion Degradation

    Publication Year: 1975, Page(s):70 - 79
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (11546 KB)

    Analysis of broken ultrasonic Al-Ag bonds involving SEM electron microprobe, ion microprobe, and Auger electron spectroscopy indicated that failure was due to corrosion. Subsequent environmental tests demonstrated that Al-Ag bonds are highly susceptible to corrosion, but Al-Au and Au-Al bonds are less so. No evidence of corrosion of Au-Ag bonds was found. View full abstract»

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  • Effects of Intermetallics on the Reliability of Tin Coated Cu, Ag, and Ni Parts

    Publication Year: 1975, Page(s):80 - 86
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (12407 KB)

    The temperature dependence of the growth rates of intermetallic compounds in the Cu-Sn, Ag-Sn and Ni-Sn systems was determined between 100°C and 213°C for Sn-dipped and Sn-plated samples. Below 175°C the fastest growing intermetallic compound was Ag3Sn. The Ni-Sn compoknd, Ni3Sn, was the slowest growing phase below 150°C, but the fastest growing phase above 175°C. The two Cu-Sn intermetallic ... View full abstract»

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  • Reliability Evaluation of Hermetic Integrated Circuit Chips in Plastic Packages

    Publication Year: 1975, Page(s):87 - 92
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (8163 KB)

    Previous studies of the basic failure mechanisms of conventional plastic-encapsulated integrated circuits have led to improvements in materials and processes which have yielded two orders of magnitude improvement in reliability. Additionally, it has been demonstrated that, where severe environmental conditions are encountered, enhanced reliability is provided by device surfaces passivated with a s... View full abstract»

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  • Migrated-Gold Resistive Shorts in Microcircuits

    Publication Year: 1975, Page(s):93 - 98
    Cited by:  Papers (21)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (6971 KB)

    Failures, failure modes and failure mechanisms related to the formation of migrated-gold resistive shorts (MGRS) in gold-metallized microcircuits will be described. Also, three different methods of screening devices for MGRS will be presented and the impact MGRS can have on device reliability will be discussed. View full abstract»

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  • Migratory Gold Resistive Shorts: Chemical Aspects of a Failure Mechanism

    Publication Year: 1975, Page(s):99 - 106
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (10884 KB)

    Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes. on the IC chip. This reaction requires the presence of a sufficient amount of water, a ... View full abstract»

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  • Electromigration Failure in Au Thin-Film Conductors

    Publication Year: 1975, Page(s):107 - 112
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (7258 KB)

    Experiments are carried out to understand the electromigration-induced failure mechanism in thin-film Au conductors. The activation energy for the atom transport and the magnitude of the current exponent In the failure equation are obtained. The role of surface coverage on the reliability of AU stripes is studied. The underlying mode of atom transport and the possible sources of flux divergences a... View full abstract»

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  • Effects of Fast Temperature Cycling on Aluminum and Gold Metal Systems

    Publication Year: 1975, Page(s):113 - 120
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (10697 KB)

    Microwave power transistors in a radar-system may undergo ~ 1011 fast heating and cooling cycles during lifetime. Controlled temperature cycling tests have been carried out on Al, passivated Al, and gold metallization systems using both a special test pattern and commercially available transistors. Significant visible and electrical changes were observed for Al, glassed Al and a laboratory Ta-Pt-T... View full abstract»

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  • Induced Passivation Defect Study

    Publication Year: 1975, Page(s):121 - 127
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5682 KB)

    An n-channel FET memory array chip whose quartz passivation layer is purposely disrupted in specific-nonrandom locations is used to study the propensity of these induced defects to fail due to localized inversion of the silicon surface stemming from positive ions contained within the defect which are residual from processing. Two distinct sizes of induced defects are considered; three and seven mi... View full abstract»

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  • Analysis of Deposited Glass Layer Defects

    Publication Year: 1975, Page(s):128 - 135
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (10170 KB)

    This paper reviews the results of deposited glass layer analysis carried out during device failure analysis and characterization studies performed at the Rome Air Development Center. The Scanning Electron Microscope (SEM) was used as the principal analysis technique for this study. The variables under consideration were glass deposition method, device interconnect metallurgy, package type and devi... View full abstract»

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  • Failure Mechanism of Metal-Polysilicon-Doped Silicon Butting Contacts

    Publication Year: 1975, Page(s):136 - 141
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5718 KB)

    The metal-polysilicon-doped silicon butting contact is presently widely used in MOS silicon gate integrated circuits because it occupies minimum area on the chip and does not require additional photolithography. A possible failure mechanism of this contact with self-aligned, ion-implanted sources and drains has been observed. Recent data obtained on processes used to fabricate two-phase, two-level... View full abstract»

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  • An Electrical Technique for the Measurement of the Peak Junction Temperature of Power Transistors

    Publication Year: 1975, Page(s):142 - 150
    Cited by:  Papers (20)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (11605 KB)

    A technique is described which uses straightforward electrical measurement procedures to determine the peak junction temperature of power transistors. To determine the peak temperature, standard electrical measurement techniques are altered to account for the difference between the distributions of the calibration and measurement currents in the active area of the device. For relatively uniform te... View full abstract»

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