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Microwave Conference, 2002. 32nd European

Date 23-26 Sept. 2002

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Displaying Results 1 - 25 of 288
  • Contents

    Publication Year: 2002 , Page(s): nil1 - nil57
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    Freely Available from IEEE
  • S-domain modeling of conducting post in rectangular waveguides by the BI-RME method

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (449 KB) |  | HTML iconHTML  

    This paper describes the application of the Boundary Integral - Resonant Mode Expansion method to the modeling of a conducting post in a rectangular waveguide. The mathematical model of this structure is determined in a very short time, in the form of pole expansion of the Generalized Admittance Matrix in the s-domain. This model is very useful in the CAD of combline or interdigital filters. View full abstract»

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  • Application of the Method of Lines for High-Q Resonant Structures

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (262 KB) |  | HTML iconHTML  

    In this paper, we present two applications of electromagnetic software based on the Method of Lines: the rutile-ring method of dielectrically frequency-temperature compensating a high-Q whispering gallery sapphire resonator and a TE01¿ sapphire resonator with distributed Bragg reflector. These studies are based on the Method of Lines in cylindrical coordinates. Because this method use a 2D1/2 resolution, it is possible to take into account layers with very small thickness. The resonant frequencies, field distribution and quality factors can be calculated by this method. Results of Method of Lines are compared with finite element analysis. View full abstract»

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  • On the Application of Duality Principle for Analysis of Slot-Like Structures

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3775 KB) |  | HTML iconHTML  

    E-H duality is proposed for the analysis of slot-like structures, which enables a possibility to adopt layouts developed for microstrip structures. The utility of this concept is demonstrated in the design of band-pass filters, which are realized on the basis of the coupled slots model. Two design examples are given - based on the interdigital hairpin slot-line resonator and S-shaped slot-line resonator. Design of the filters, and, thus, validity of the proposed approach are verified via rigorous "Momentum" simulation. View full abstract»

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  • Analysis of H-Plane Waveguide Components with Dielectric Obstacles by the BI-RME Method

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (182 KB) |  | HTML iconHTML  

    This paper presents a novel method for the wideband modeling of H-plane waveguide components, which include dielectric obstacles. Both the planar component and the dielectric obstacles have an arbitrary shape. This method is based on the combination of the segmentation technique and the Boundary Integral-Resonant Mode Expansion (BI-RME) method. Two examples show the effectiveness of the method. View full abstract»

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  • Finite Substrate Microstrip Transmission Line Analysis Using the Characteristic Green's Function-Complex Images Technique

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (265 KB) |  | HTML iconHTML  

    Quasi-static characteristic impedance of a microstrip transmission line on a finite dielectric substrate is calculated by implementing a novel closed-form Green's function in the method of moment (MOM). The Green's function is derived by using the Characteristic Green's Function-complex images (CGF-CI) technique. In this technique, the original 2-D structure is separated into two 1-D layered media surrounding the source. The 1-D Helmholtz's equations are then solved for each of the layered media with proper boundary conditions to find the respective characteristic Green's functions. Combining these 1-D characteristic Green's functions in an integral form gives the spatial Green's function for the original structure. The complex images technique is then applied to this integral form to derive the closed form representation of the spatial Green's function. Since the structure is non-separable, the derived Green's function is an approximate solution especially in the corners. Nevertheless the calculated characteristic impedances show good agreements with other numerical techniques. View full abstract»

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  • High Frequency Applications For Two-Dimensional Periodic Substrates

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (4868 KB) |  | HTML iconHTML  

    The use of advanced ceramic fabrication, specifically, the Indirect Solid Free Form method was utilized to develop high frequency periodic substrates. The electrically thick substrates have reduced substrate modes because of periodic inclusions that are spaced in a two dimensional lattice. The inclusions can serve multiple purposes, to inhibit coupling between elements on the substrate and to control and manipulate the waves as well. As an example, Alumina rods in air have been periodically placed to block the formation of parasitic parallel plate modes. The periodic arrangement creates a two dimensional spatial filter in that fields evanesce in the substrate in all directions. The ceramic substrates block energy in the range of 30 to 40 GHz by using inclusions 1.05 mm wide in a lattice of 3.2 mm. The evanescent nature of the high frequency substrate is then utilized to create a high quality defect mode resonance with a Q of 1308 at 34.48 GHz that can be utilized for high-Q filters embedded in the substrate. View full abstract»

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  • Nonlinear Signal Processing by means of Surface Magnetostatic Waves: Solitons in Metallized Structures.

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3887 KB) |  | HTML iconHTML  

    Nonlinear magnetostatic waves (MSWs) have recently received considerable attention for their potentialities in microwave signal processing through the generation of phenomena like modulation instability and solitons, typical of optical devices too. In this paper, the generation of MSW solitons is analyzed from a theoretical and experimental point of view, giving an engineering approach of the problem. The nonlinear Schrödinger equation (NLSE) used for describing the physical effect is here used as a basis for a circuital analysis of a MSW delay line, to model the propagation of nonlinear surface wave pulses. Experimental results are given to confirm the validity of such a model. View full abstract»

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  • Rectangular Waveguide Filters Using Photoimageable Thick-film Processing

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3019 KB) |  | HTML iconHTML  

    Band-pass H-plane offset Rectangular Waveguide filters at W-Band (75-110GHz) and F-Band (90-140GHz) are presented. The filters are designed using multilayer thick-film processing with Alumina as a base. The process incorporates photoimageable thick-film paste for better precision and sharpness at the corners of the offsets. The filters do not require any tuning and are described with regard to their manufacture and measurement results. The centre frequencies are 85GHz and 105GHz and their relative bandwidths are ¿ 10%. The filters are de-embedded using a specially designed calibration set which uses the multiline TRL technique. Insertion loss of 5 dB and return loss less than 15 dB is measured for waveguide thickness of 18¿m. View full abstract»

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  • A New Type of Low Pass Filter With Defected Ground Structure

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3586 KB) |  | HTML iconHTML  

    A new design method of low pass filters (LPF) using defected ground structure (DGS) on planar transmission lines such as microstrip and coplanar waveguide (CPW) is presented. LPF is designed easily by extracting the equivalent circuit elements of unit DGS and compensating the line width of capacitive transmission line. The proposed LPF does not have any open stub, discontinuity elements such as Tee-or Cross-junction, and the repeated low-high impedance elements, which have been essential for design of conventional LPF. Only two DGS patterns and one transmission line with broadened width are used for design of the proposed LPF. Simple structure, small size (49% of a conventional LPF), less discontinuities, non-existing of the high impedance lines, no need for wire bonding required in CPW discontinuities, and high power handling capability are obtained through the proposed LPF. View full abstract»

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  • On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3269 KB) |  | HTML iconHTML  

    A low-loss, low-pass microstrip transmission line based microwave filter using 6-¿m low-k dielectric, Benzocyclobutene (BCB), as an interface layer has been fabricated on a standard CMOS grade silicon substrate. Standard 50-Ohm microstrip lines were fabricated and exhibit lower loss compared with the microtrip line on silicon without the BCB layer. The filter has a cut-off frequency at 10 GHz with an insertion loss of 1.1 dB. Simulation and measurement results of the filter are provided. Full-wave analysis of a 10 GHz bandpass filter is shown as well. View full abstract»

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  • Cold-FET ENR Characterisation Applied to the Measurement of On-Wafer Transistor Noise Parameters

    Publication Year: 2002 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (4159 KB) |  | HTML iconHTML  

    This paper presents a method to characterize the Excess Noise Ratio (ENR) of a Cold - FET (Vds=0V) with the gate reverse-biased, for its application to the measurement of on - wafer FET noise parameters over the microwave and millimetre - wave ranges. The characterisation is performed by determination of a device broadband noise circuit - model, from its measured S-parameters and noise powers. Experimental results up to 40 GHz are given. View full abstract»

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  • Time domain method for the noise parameters measurement

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2751 KB) |  | HTML iconHTML  

    The noise parameters are usually measured by a multi-impedance method. We propose a new method which requires a lighter equipment using a numerical process. It consists in using an inverse Fourier's transform in order to identify the correlated from the non-correlated parts of the measured noise power. View full abstract»

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  • A Compact System for Systematic Noise Measurement of Schottky Diodes for THz Applications

    Publication Year: 2002 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3645 KB) |  | HTML iconHTML  

    As Schottky diodes still remain the most frequently used devices in THz mixers, precise evaluation of their DC and noise performance is essential for the improvement of mixers in the sub-millimeter wave regime. We present first results from a measurement system which is able to measure the DC characteristics and the noise for Schottky diodes as a function of frequency and bias current. The automated system is capable of contacting many diodes consecutively. View full abstract»

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  • Broadband Multi-State Electronic Impedance Tuner for On-Wafer Noise Parameter Measurement

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (4310 KB) |  | HTML iconHTML  

    Novel multi-state impedance tuner for use in on-wafer noise-parameter measurement system is reported. It is based on just three commercial GaAs MMIC switches that connect into or out the circuit six delay sections composed of natural and artificial transmission lines, and thus provide 36 distinct impedances at each frequency. The tuner's broadband operation (50 - 2000 MHz) was provided by optimisation of the impedance distributions using the D-optimal criterion from the design of experiments (DOE). Measurement results confirm high impedance repeatability and noise performance of the tuner. View full abstract»

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  • HTCC based Ku/IF/BB Down Converter for satellite on board processing applications

    Publication Year: 2002 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3788 KB) |  | HTML iconHTML  

    This paper presents the demonstration of an ultra compact High Temperature Cofired Ceramic (HTCC) based down converter for satellite on board processing equipment. The down converter is composed of three sections: the RF Front end in KU Band, the first IF at 400 MHz and a base-band chain at 50 MHz. The overall gain is of 90dB and the OIP3 is of 20 dBm. GaAs MMICs, Si RF-IC and ceramic saw filter have been integrated on a compact HTCC module of a size of 59x66x6 mm. View full abstract»

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  • RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3706 KB) |  | HTML iconHTML  

    This paper presents the development of RF System-on-Package (SOP) architectures for compact and low cost wireless radio front-end systems. A novel 3D integration approach for SOP-based solutions for wireless communication applications is proposed and utilized for the implementation of a C band Wireless LAN (WLAN) RF front-end module by means of stacking LTCC substrates using ¿BGA technology. Results from the characterization and the modeling of RF vertical board-to-board transitions using ¿BGA process are presented for the first time. LTCC designs of high-performance multilayer embedded bandpass filters and novel stacked cavity-backed patch antennas are also reported. In addition, the fabrication of very high Q-factor inductors and embedded filter in organic substrates demonstrate the satisfactory performance of multilayer organic packages. View full abstract»

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  • Characteristics of GaAs HEMTs with Flip-Chip Interconnections

    Publication Year: 2002 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (481 KB) |  | HTML iconHTML  

    A GaAs HEMT with flip-chip interconnections has been developed. There are various ground current passes for the HEMT on surface of the GaAs chip in this assembly structure, each pass depending on the transmission line type for the chip. We evaluated the high-frequency characteristics of the HEMT TEGs with flip-chip interconnection for three types of the transmission lines: with a microstrip line (MSL), with a coplanar waveguide (CPW), and with an inverted microstrip line (IMSL). All three types of TEGs had similar values of a maximum available power gain (MAG) at 30 GHz. However, the IMSL-type TEG, which had superior characteristics in high-frequency ranges of more than 30 GHz, was chosen as the most suitable type. The IMSL-type TEG had an MAG of 10.02 dB and a Rollett stability factor K of 1.20 at 30 GHz. View full abstract»

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  • Evolution of LTCC technology for industrial applications

    Publication Year: 2002 , Page(s): 1 - 2
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1831 KB) |  | HTML iconHTML  

    The LTCC (Low Temperature Cofired Ceramic) technology has been used for years in various applications like automotive (under the hood), data-processing, telecoms, datacoms, military and space, industrial, packaging. The evolution of the materials, processes and approach have reinforced its cost and performance attractivity. This is particularly true in the case of high frequency/optoelectronic products. This paper gives an overview of the enabling features of the LTCC technology for these applications, as well as an example of a 10 Gb/s transmitter. View full abstract»

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  • A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3283 KB) |  | HTML iconHTML  

    A high performance 6-18 GHz 5-bit reflection type phase shifter MMIC is presented. It employs a novel ultra-broad-band circuit design technique utilizing a series/parallel LC circuit for an 180° phase shift over all frequencies. The fabricated phase shifter MMIC with SPDT switch suitable for T/R modules has demonstrated a typical insertion loss of 9.4 dB+/¿1.4 dB, a maximum RMS amplitude error of 0.33 dB and a maximum RMS phase error of 7° over entire operating bandwidths. View full abstract»

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  • Broadband Active Phase Shifter GaAs MMIC

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3492 KB) |  | HTML iconHTML  

    A broadband multifunction MMIC, achieving combined amplification and phase shift, has been developed on 2 (3.2 × 4) mm2 chips using the UMS PH25 process. The frequency range is as large as characterised by a ratio of Fmax/Fmin = 6. The 5 bit phase shifter section is based on switched "all-pass" cells. The amplification function is realised through active switches consuming less than a total of 40 mA under 3V and providing an overall gain of about +6 dB. View full abstract»

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  • Influence of backside metallization on a coplanar X-band LNA

    Publication Year: 2002 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (716 KB) |  | HTML iconHTML  

    In this paper the influence of the backside metallization on a coplanar X-band low noise amplifier MMIC is described. First, we demonstrate the selection of transistor devices including the modelling especially with respect to the extraction of RF noise parameters. After that the simulation results and the layout of the LNA are presented, neglecting backside effects on coplanar circuits. Completing measurements on the fabricated LNA show the influence of the backside metallization in comparison with simulation results. View full abstract»

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  • A Miniaturized 0.5-Watt Q-band 0.25-μm GaAs PHEMT High Power Amplifier MMIC

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3570 KB) |  | HTML iconHTML  

    The performance of a very compact power amplifier MMIC for Q-band applications is reported. Using a 4-inch 0.25-μm GaAs power PHEMT process, this 4-stage amplifier achieved a linear gain of 19 dB over the 36 to 45 GHz frequency range, with an output power at 1-dB gain compression of 26 dBm (P-1dB=400 mW), and a saturated output power of 0.5 Watt (Psat=27 dBm), for a chip size of only 2.25 mm2 (1.25 × 1.8 mm2). Compared to state-of-the-art power amplifier MMICs operating in the 36-43 GHz frequency range, the combined output power- and gain- densities per chip area are nearly a factor two higher, namely 220 mW/mm2 and 8.5 dB/mm,sup>2. View full abstract»

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  • W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth

    Publication Year: 2002 , Page(s): 1 - 4
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3961 KB) |  | HTML iconHTML  

    Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1-¿m GaAs MMIC process. Both simulation and test results show that the mixers are with 12.25 and 11.75 dB average conversion losses, respectively. Both mixers have IF bandwidth wider than 20 GHz. The conversion loss flatness of the symmetric circuit is within ±1.25 dB. To our knowledge, these are the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixers. View full abstract»

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  • Baseband Predistortion Lineariser Using Direct Spline Computation

    Publication Year: 2002 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (282 KB) |  | HTML iconHTML  

    A baseband predistorter is presented. Key features of the predistorter resides in the use of cubic splines interpolation to generate predistorted input data to the power amplifier, resulting in a reduction of computational effort with respect to traditional polynomial interpolators. Simulated behaviour of the proposed scheme is presented, demonstrating the effectiveness of the approach. View full abstract»

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