By Topic

ARFTG Conference Digest-Spring, 47th

Date June 1996

Filter Results

Displaying Results 1 - 25 of 35
  • Retrospective on the Career of Mario A. Maury, Jr.

    Publication Year: 1996 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (510 KB)  

    Mario A Maury, Jr., a major contributor to our microwave industry, our microwave business and the IEEE died March 30, 1995. A review is presented of his life and contributions in the context of his work ethic, his enthusiasm, and his sense of responsibility toward his family, his company, and his industry and its several technical societies. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • W-Band Noise Figure Measurement Designed for On-Wafer Characterisation

    Publication Year: 1996 , Page(s): 5 - 8
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (487 KB)  

    The first fully automated noise and S-parameter measurement bench is reported for W-band on-wafer characterisation. A calibration procedure is described that allows the receiver reference plane to be accurately moved to the probe tip. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Experimental Investigation of On-Wafer Noise Parameter Measurement Accuracy

    Publication Year: 1996 , Page(s): 10 - 13
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (301 KB)  

    The accuracy problem of noise parameter characterization of active microwave devices in highly mismatched systems is addressed. An experimental investigation is made to determine the dependency of noise parameter measurement uncertainty on the device's output mismatch. We have designed and fabricated five different structures of a new passive device, useful as a verification artefact, suited for on-wafer measurements. The main feature specifiing this device is the same order of magnitude for input-output reflection coefficient and for noise parameters, as for low noise field effect transistors. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Vector Corrected On-Wafer Power Measurements of Frequency Converting Two-Ports

    Publication Year: 1996 , Page(s): 14 - 17
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (295 KB)  

    In this paper a universal nonlinear measurement system is presented. The On-Wafer approach described here is commercially available and utilizes a modified vectorial network analyzer (Wiltron 360 B) and a special software package developed at the IMST. The system determines the complex quantities of all power waves at all ports of the DUT. Since measurements are carried out at all interesting hamionics, the system is ideal for the complete electrical characterization of a frequency multiplier for instance. In contrast to other power and harmonic measurement approaches using VNAS, the technique proposed here does not need an additional microwave synthesizer for locking the receiver to the harmonics. The described system exhibits a power sweep range of more than 80 dB. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Transmission Response Measurements of Frequency Translating Devices

    Publication Year: 1996 , Page(s): 18 - 21
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB)  

    This paper presents two methods for accurately determining the transmission response of frequency translating devices: an inferred response technique using a vector network analyzer, and a direct response technique utilizing a microwave transition analyzer. Tradeoffs between these two approaches are presented along with results for a 20 GHz downconverter. The emphasis here is on single-sideband converters, but the application to double-sideband converters is also described briefly. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An Application of Membrane Probes for On-Wafer Testing of Unmatched High Power MMICs

    Publication Year: 1996 , Page(s): 22 - 25
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (304 KB)  

    A membrane probe capable of determining large signal power handling capabilities of discrete and partially matched large periphery FETs at microwave frequencies has been developed. This paper describes the application and implementation of a membrane probe for a 15.7 mm partially matched 6W power amplifier MMIC that employs off-chip matching networks for a high volume multichip module application. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Characterization of A 2 GHz Submicron Bipolar 60 Watt Power Transistor with Single Tone, Multi-Tone, and Cdma Signals

    Publication Year: 1996 , Page(s): 26 - 31
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (409 KB)  

    Linearity characterization of RF power devices usually involves a CW power sweep showing the 1 dB compression point of the device. RF power amplifier designers are requiring that devices be characterized with ¿application type¿ signals. In this paper single tone, multi-tone and CDMA signals are used to characterize a 60 watt submicron bipolar device. Relationships between device characteristics such as 1 dB compression, intermodulation distortion, and spectrum regeneration are discussed. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Full 2-Port Calibrated S-Parameter Measurements up to 30 W of High-Temperature Superconducting Filters

    Publication Year: 1996 , Page(s): 32 - 41
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (625 KB)  

    We have configured, tested and qualified a high-power network analyzer that can deliver between 100 pW and 30 W to a DUT. This system can be readily switched between low-power and high-power levels, output power leveled and fully calibrated over its full power range. This calibrated instrument was used to measure the performance of high-power high-temperature superconducting (HTS) filters. The performance of these prototype filters measured at an operating power of 8 W was: <0.02 dB in-band insertion loss, 0.2 dB in-band ripple, >17 dB in-band return loss and >50 dB off-band rejection. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 20W Full Octave Amplifiers in S- and C-Band

    Publication Year: 1996 , Page(s): 42 - 47
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (441 KB)  

    The tremendous growth of commercial communications has brought about an increased demand for high power solid state devices with good linearity and thus a need for sophisticated characterization techniques at high power levels. At the same time, even though the frequency bands utilized for commercial communications are typically quite narrow, they are becoming so numerous that they almost fill the entire spectrum. It becomes therefore highly desirable to characterize devices working in different frequency bands without changing the measuring set-up. This paper describes two wideband amplifiers designed to provide a high power source in a device characterization system. Each amplifier covers several popular commercial bands and the coverage of the two amplifiers overlaps slightly so that, when used together, they provide a powerful source with over 43 dBm of power all the way from 1.8 GHz to 8 GHz. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Automated Test Equipment for High Power Solid State Device Development and Characterization

    Publication Year: 1996 , Page(s): 48 - 57
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (649 KB)  

    This paper describes an automated High Power Amplifier Test System (HPATS) specially designed for tuning, testing and characterization of high power solid state devices during their development. In the 1.0 to 17.0 GHz bandwidth, Si Bipolar, Si MOSFET and GaAs FET transistors with output power up to 150 W for the lower end and up to 25 W for the higher end of the band can be tested. The system has a one-octave instantaneous bandwidth and can operate from 1.0 GHz to 17.0 GHz in four different bands. The base of this equipment, which is low power, covers a 0.5 to 20.0 GHz band, while each of the associated power sections that deliver the input power to the device under test, covers a one-octave bandwidth. For tuning purposes, the Input Return Loss and the Gain versus frequency can be seen in real time. The measurement capabilities of this system include a one-tone test in three modes and a two-tone test in two modes. The one-tone test includes the standard power measurements (Pin, Pout, Gain, Gss, Gain Compression, Phase, Currents, Drain/Collector Efficiency and Power-Added Efficiency) as well as the transmission phase. The two equal tone test includes the measurement of IMD3, IMD5 and IMD7. GaAs FET devices can be biased automatically and the other devices are biased manually. This presentation describes the equipment and exemplifies its capabilities by showing actual data obtained from the measurement of S-band 30 W GaAs FET devices. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Simple Technique Employs Vector Network Analyzer to Broadband High Power Amplifiers in Situ

    Publication Year: 1996 , Page(s): 58 - 66
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (779 KB)  

    A relatively simple test set-up assists in the broadband tuning of circuits operating at high power levels (i.e. 30 Watts). This procedure also employs a fairly common equipment set. With this method it is possible to optimize ¿in (reflection coefficient) as well as Gp (power gain) across the frequency band of interest. This technique employs a network analyzer, which displays ¿in or Gp, allowing the effects of circuit tuning to be observed in real time. This dramatically reduces the time it takes to optimize circuit performance. ¿in data includes phase information, which can reduce circuit losses seen when transforming past 50 Ohms. This method also allows the user to extend the measurement reference plane into the input matching network. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • GaAs MESFET lifetime prediction using microwave waveform probing

    Publication Year: 1996 , Page(s): 67 - 69
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (222 KB)  

    GaAs MESFET lifetime under Class B operation at 2 GHZ limited by hot-electron-induced degradation was accurately predicted by using a novel microwave waveform probing technique. The degradation is caused by MESFET operation in the high drain-gate voltage region and follows a square-root time dependence. To determine MESFET lifetime, instantaneous drain-gate voltage waveform is first measured at the device plane. Based on the correlation between dc and RF breakdown, the equivalent amount of dc gate current stress is then evaluated. Finally, MESFET lifetime is determined from the results of dc stressing at various gate current levels. The average gate current was found to serve as a good indicator of Class B electrical stress. Gate current-lifetime (stress)×(time) product of 1.3 A·hr/cm accurately described the MESFET technology under investigation. The lifetime prediction method can be applied to MESFET operation under any bias, drive and match conditions of interest and included into CAD programs for simulation of performance-reliability trade-offs. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • New Applications for Pulsed/Isothermal Test System

    Publication Year: 1996 , Page(s): 70 - 75
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (513 KB)  

    An Arbitrary Pulsed Semiconductor Parameter Analyser (APSPA) system, developed originally for isothermal, high-power characterisation, is described. Assembled from off-the-shelf modules, the system boasts rapid and precise measurement, making it appealing for production-line use. Several novel measurements with application in research, modelling, and testing environments, are presented. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Overview of High Power and Large Signal Measurements and Calibration

    Publication Year: 1996 , Page(s): 76 - 84
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (625 KB)  

    This paper is an overview of the present state of the art in high power measurement methods. It certainly does not cover all aspects and approaches, but is meant to give a flavor of some of the key advances using these technologies. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Development of On-Wafer Microstrip Characterization Techniques

    Publication Year: 1996 , Page(s): 85 - 94
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (413 KB)  

    We present methods for calibrating microstrip devices and circuits using coplanar microprobes and TRL calibration. An on-chip CPW to microstrip transition [1] is employed to measure accurate S-parameters to 50 GHz [1,2]. A CAD model, developed for the transition, is used to de-embed measured results when using a commercial calibration substrate with measurement reference planes at the probe tips. We also make TRL calibration artifacts which include CPW to microstrip transitions in the standards so that we can use the TFX algorithm to de-embed adapters on the ANA. These test methodologies can be used to characterize many types of microstrip devices including printed wire boards and thick film microwave substrates. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Versatile W-band On-wafer MMIC Test Set

    Publication Year: 1996 , Page(s): 95 - 101
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (439 KB)  

    This paper describes the successful characterization of various W-band MMICs uniquely different in function using an automated on-wafer test set. Several thousand MMICs, including low-noise amplifiers, mixers, VCOs, and detectors, have been tested for gain, noise figure, tuning range, and responsivity, respectively. The ability of the test set to easily accommodate the individual test requirements of the different MMICs is important in establishing a high throughput system and demonstrates both its versatility and flexibility. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An On-Wafer Deembedding Procedure for Devices under Measurement with Error-Networks Containing Arbitrary Line Lengths

    Publication Year: 1996 , Page(s): 102 - 111
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (525 KB)  

    Error networks that include contact structures and which embed devices under measurement (DUM) can often be partitioned into different line segments having constant line widths. The basic idea of the here proposed deembedding procedure is the calculation of the error network from a piece by piece characterization of the line segments. In the first step of the proposed deembedding method, the propagation constants and the characteristic impedances of the various line segments are calculated from high frequency S-parameter measurements. In the second step, the chain parameter matrix Aseg of the different line segments are then calculated. The third step consists of the calculation of the chain parameter matrix Aerror of the complete error network. Finally, one can calculate the scattering chain parameter matrix Terror from the related chain parameter matrix A'error of the complete error network. The main advantage of this method lies in the fact that only thru lines with different line lengths have to be measured. A further advantage of this deembedding procedure is that the error networks embedding different DUM's can contain line segments of arbitrary line lengths. Therefore, the proposed deembedding procedure can be used for DUM's that are embedded in error networks that consist of different line segments with constant line widths. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Using Orthogonal Polynomials as Alternative for VIOMAP to Model Hardly Nonlinear Devices

    Publication Year: 1996 , Page(s): 112 - 120
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (523 KB)  

    Being a series approximation, VIOMAP is not well suited to model hardly nonlinear devices due to numerical problems. The prediction of two-tone behavior based on one-tone measurements of a microwave power amplifier which is driven deeply into compression, is used as test case to show the potentials of a possible alternative which is based on orthogonal polynomials. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Vector Network Analyzer Check Standards Measurements and Database Software

    Publication Year: 1996 , Page(s): 121 - 128
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (505 KB)  

    Vector network analyzers provide a convenient way to measure scattering parameters of a variety of microwave devices. However, these instruments, unlike oscilloscopes for example, require a relatively high degree of user knowledge and expertise. Prior to use, the network analyzer must undergo measurement calibration or error correction. Due to the complexity of the instrument and of the calibration process, there are many ways in which a poor measurement calibration or measurement may be produced. Check standards have been used to verify that the network analyzer is operating properly. In the past, the measurements were recorded manually and, sometimes, interpretation of the results was problematic. To aid our measurement assurance, a software program was developed to automatically measure a check standard and compare the new measurements with an historical database of measurements of the check standard device. The program can acquire new measurement data from selected check standards, plot the new data against the mean and standard deviation of prior data for the check standard, and update the database files for the check standard. This paper describes the function of the software including a discussion of its capabilities. The way in which the software is used in our lab is also described. Finally, some examples are given showing how the software can detect potential measurement problems. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Waveform Measurements on a HEMT Resistive Mixer

    Publication Year: 1996 , Page(s): 129 - 135
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (427 KB)  

    Calibrated on-wafer waveform measurements under two-tone stimuli are demonstrated on a HEMT, configured as a resistive mixer. These large-signal measurements allow us not only to determine the conventional performance parameters, but also to analyse the influence of the phase relationship between the two excitation signals on the characteristics. For the considered HEMT resistive mixer, the dependency of the intermodulation products on the phase relationship between the LO-signal and the RF-signal becomes significant at high RF-powers. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Sure Methods of On-Wafer Scattering Parameter Measurements with Self-Calibration Procedures

    Publication Year: 1996 , Page(s): 136 - 145
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (488 KB)  

    This article is directed towards methods of network analyzer calibration with the 15-term full model. The 15-term full model includes all leakage errors between on-wafer probe tips. This model is well suited to eliminate measurement errors of network analyzer measurements on the wafer. All presented procedures are so-called self-calibration methods, allowing for standards that are not completely known. This allows to create calibration standards in an easy way and to monitor the calibration process. Furthermore, the presented TMRN procedure is especially designed for coaxial measurement problems and the presented MORN procedure is designed for on-wafer measurements. Experimental results of the MORN and the TMRN method testify the very good accuracies and viabilities of these 15-term self-calibration procedures by measurements. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Statistical Calibration of Wafer Probe Data into a Fixtured Environment

    Publication Year: 1996 , Page(s): 146 - 155
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (736 KB)  

    A methodology for improving the design verification process will be discussed. Statistical regression was used to determine the relationship between wafer probe and fixtured S-parameter and compression measurements. Statistical calibration is discussed in the context of modeling measurements of both the magnitude and phase in a fixtured environment given wafer probe data. The calibration procedure was successfully demonstrated on power amplifier data over the 6.5- to 20-GHz range. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Novel Software Techniques for Automatic Microwave Measurements

    Publication Year: 1996 , Page(s): 156 - 159
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (262 KB)  

    Although many microwave measurement techniques are heavily based on special purpose software, the application of modern software techniques like object oriented programming and new programming language like C++ is seldom used. The impact of such new software solutions can drastically improve the overall design of a microwave test set. The paper presents the design and implementation of a new multiport network analyzer with particular attention to the control program architecture. The use of Object Oriented Programming techniques results in a clear and easy to maintain solution which boosts both the user interface and the overall test set organization. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Measurement and Modeling of Picosecond Step Response of GaAs MESFETs

    Publication Year: 1996 , Page(s): 160 - 163
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (245 KB)  

    The step response of a GaAs MESFET was measured using three techniques. The results were then compared with HP MDS using two nonlinear device models (EEFET3 and Statz-Pucel). Small and large signal TDT measurements give 15 - 50 ps switching times with a small bias dependence, increasing with drain current. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Improvement of the Electronic Mode Stir Chamber Automated Data Acquisition System for Conducting Electromagnetic Susceptibility Tests

    Publication Year: 1996 , Page(s): 164 - 168
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (771 KB)  

    An automated data acquisition system implements the Electronic Mode Stir Chamber (EMSC) technique with modifications made to transition it from a research and development system to a production qualify sysfem. The user interface the communication between the software and the instruments were improved by transferring the software into the LabWindows/CVI environment. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.