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ARFTG Conference Digest-Fall, 44th

Date Dec. 1994

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Displaying Results 1 - 23 of 23
  • Simplified Automatic Calibration of a Vector Network Analyzer (VNA)

    Publication Year: 1994, Page(s):1 - 9
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (435 KB)

    An Automatic calibration procedure by a Multi-State Electronic Transfer Standard (MSETS) to deduce the systematic error coefficients through a one-time connection to The VNA ports have been described before [1]. This presentation describes a procedure to place the transfer standard permanently inside the VNA test-set. After initial characterization of the transfer standard at the user defined refe... View full abstract»

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  • A Convenient Indication of the Effect of Instrumentation Errors on Six - Port Reflection Measurements

    Publication Year: 1994, Page(s):10 - 19
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (498 KB)

    The performance of a six - port Vector Reflection Analyzer is mainly limited by the accuracy of its calibration kit, but the fundamental limit is due to the instrumentation. This paper shows the relationship between instrumentation errors in scalar power measurements and the corresponding residual directivity, source match and frequency response errors in a six - port reflection measurement. Furth... View full abstract»

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  • Compensation for Substrate Permittivity in Probe-Tip Calibration

    Publication Year: 1994, Page(s):20 - 30
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (679 KB)

    We demonstrate a method of compensation for the effect of substrate permittivity on coplanar waveguide probe-tip scattering parameter calibrations, modeling the effect as a capacitance at the probe tip. Comparison to on-wafer multiline TRL calibration verifies its accuracy. The method allows calibration to the probe tip using generic off-wafer standards with accuracy comparable to that of on-wafer... View full abstract»

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  • Modeling & Measurements of EM Effects in Multichip Modules

    Publication Year: 1994, Page(s):31 - 38
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (545 KB)

    Rome Laboratory is determining the reliability and electromagnetic (EM) performance of multichip modules (MCM) using an integrated multi-disciplinary analysis and measurement methodology. Simulations and Measurements of EM Effects are used to evaluate the susceptibility of MCM technologies and to determine their vulnerability in their operational environments. EM effects are simulated using modern... View full abstract»

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  • Accuracy and Repeatability in Time Domain Network Analysis

    Publication Year: 1994, Page(s):39 - 46
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (433 KB)

    This paper examines the importance of measurement repeatability in time domain network analysis and includes an analysis of the limitations imposed on theoretical accuracy by measurement noise. A closed-loop correction algorithm implemented in a fast, equivalent-time sampling, time domain reflectometer improves source timing accuracy, the dominant cause of nonrepeatability. An example measurement ... View full abstract»

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  • Time Domain Network Analysis using the Multiline TRL Calibration

    Publication Year: 1994, Page(s):47 - 55
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (426 KB)

    We apply the multiline TRL (through-reflect-line) method to the calibration of a time domain network analyzer (TDNA). The calibration removes the effects of cables and connectors, nonideal source and sampler responses, source and sampler mismatch, and frequency-dependent characteristic impedance of the transmission lines. Multiline TRL is especially well suited to TDNA and provides not only a comp... View full abstract»

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  • Accurate Determination of the Impedance Profile Using Enhanced Accuracy Time Domain Reflection and Transmission Measurements

    Publication Year: 1994, Page(s):56 - 62
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (367 KB)

    A method of determining the impedance profile of transmission structures with high accuracy is presented. It employs frequency domain error correction and reconstruction of the original time domain data. This method is particularly useful for extracting the equivalent circuit model of the interconnects in the ICs and IC packages, which require high precision time domain reflection and transmission... View full abstract»

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  • Study and Development of On-Wafer Cryogenic Calibration Techniques

    Publication Year: 1994, Page(s):63 - 67
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (241 KB)

    In recent years significant progress has been made in the development of cryogenic, on-wafer probing systems [reference 1-6]. The major shortcoming of previous efforts has been the lack of a repeatable and accurate system yielding results comparable to room temperature systems. A quantitative study must be performed to determine measurement accuracy and repeatability. Most importantly, without suc... View full abstract»

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  • Error Correction in On-Wafer Harmonic Power Measurements

    Publication Year: 1994, Page(s):68 - 80
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (490 KB)

    This paper presents a simple method for correcting errors in on-wafer harmonic power measurements due to non-50 ¿ port impedances and network losses. To correct for losses and mismatches and to calculate the equivalent 50 ¿ power levels at the fundamental and harmonic frequencies, the formulation makes use of vector S-parameter characterization of the test system and the DUT. The 50 ¿ correctio... View full abstract»

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  • Proposal of Up-to-Date Standards on Methods of Measuring Noise Parameters of Microwave Transistors

    Publication Year: 1994, Page(s):81 - 88
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (378 KB)

    One of the most interesting topics for microrwave community is the characterization of low-noise transistors. After so many years, the Standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is here proposed as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, ... View full abstract»

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  • Noise Parameter Data Comparison While Varying the On-Wafer S-Parameter Calibration Technique

    Publication Year: 1994, Page(s):89 - 97
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (765 KB)

    The results of an on-wafer device noise parameter measurement data comparison while varying the technique of the respective on-wafer scattering (S) parameter calibration portion of the overall noise parameter measurement system calibration are presented. Through this comparison, the sensitivity of the measured noise parameters to the on-wafer S-parameter calibration is shown. View full abstract»

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  • Advanced PSA Bipolar Transistors for Wireless Applications: Measurements of Scattering Parameters and Noise Figure

    Publication Year: 1994, Page(s):98 - 104
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    A complete investigation on the performance of a series of double polysilicon self-aligned (PSA) bipolar transistors in terms of scattering parameters and noise figure is here reported. The devices have been characterized over the 1-4 GHz frequency range in several bias conditions to the aim of assessing the optimum bias values for the best trade-off between noise and gain performance. This is the... View full abstract»

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  • S-Parameter Test Set for Pulsed Networks

    Publication Year: 1994, Page(s):105 - 111
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (296 KB)

    A scattering parameter test set that operates in a pulsed mode for analyzing RF/microwave networks has been developed. Designed for analyzing various components of accelerator RF systems, the test set is applicable to a variety of components at different frequencies. The test set consists of an embedded processor, a tracking downconverter, a dual channel vector detector, a timing distribution modu... View full abstract»

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  • Combining RF Functional Testing and In-Circuit Test Systems

    Publication Year: 1994, Page(s):112 - 116
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (300 KB)

    Digital Circuit Board Manufacturers have benefited greatly in recent years from In-Circuit Test Systems available from a number of sources. These systems provide sophisticated tools such as Boundary Scan and TestJet technology for detecting printed circuit board errors prior to subsequent assembly operations. High volume RF and mixed signal circuit board manufacturers have been less fortunate in t... View full abstract»

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  • Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications

    Publication Year: 1994, Page(s):117 - 125
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 ¿¿C) by placing the device text fixture in a thermo-controlled chamber. An... View full abstract»

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  • Improved Scalar Transmission Measurements using Vector Source Match Correction

    Publication Year: 1994, Page(s):126 - 133
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (373 KB)

    Scalar transmission measurements are limited mainly by mismatch errors when the insertion loss is small. Unlike vector analyzers, it is not possible to use 12- term error correction to reduce these errors. However, using an inexpensive six - port reflection analyzer and a scalar detector, it is possible to greatly improve measurement performance by correcting for source match error in the transmis... View full abstract»

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  • Line Parameter Characterization of Laser induced deposited Nickel Lines

    Publication Year: 1994, Page(s):134 - 141
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (451 KB)

    The electrical parameter of laser induced deposited coplanar transmission lines are measured und compared to simulation results. By this method the passiv structure of microwave circuits can be realized very quickly at low cost. For manufacturing a mask any mask necessary. The disadvantage of this method is the high attenuation affected by a high ¿¿. The evaluation of the measured data is performe... View full abstract»

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  • Automatic RF Techniques Group Executive Committee Members October 12, 1994

    Publication Year: 1994, Page(s):151 - 153
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    Freely Available from IEEE
  • ARFTG Mailing and Membership List as of 11/18/94

    Publication Year: 1994, Page(s):155 - 168
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    Freely Available from IEEE
  • Table of contents

    Publication Year: 1994, Page(s):1 - ix
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    Freely Available from IEEE
  • Survey of the articles

    Publication Year: 1994, Page(s):1 - 146
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    Freely Available from IEEE
  • Author index

    Publication Year: 1994, Page(s):1 - 165
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    Freely Available from IEEE
  • Table of contents

    Publication Year: 1994
    Request permission for commercial reuse | PDF file iconPDF (2132 KB)
    Freely Available from IEEE