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2006 International Semiconductor Conference

Date 27-29 Sept. 2006

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  • [Front cover]

    Publication Year: 2006, Page(s): C1
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  • Copyright page

    Publication Year: 2006, Page(s): II
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  • Foreword

    Publication Year: 2006, Page(s): III
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  • Organizing Committee

    Publication Year: 2006, Page(s): V
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  • International Advisory Committee

    Publication Year: 2006, Page(s): V
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  • Technical Program Committee

    Publication Year: 2006, Page(s): V
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  • Paper Review Board

    Publication Year: 2006, Page(s): VI
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  • Contents

    Publication Year: 2006, Page(s):VII - XV
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  • Author index

    Publication Year: 2006, Page(s):XVII - XIX
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  • Physics of Materials 1

    Publication Year: 2006, Page(s): 235
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  • Dielectric Properties of Fine Grains Barium Titanate Ceramics Prepared by Mechanochemical Synthesis

    Publication Year: 2006, Page(s):237 - 240
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4552 KB) | HTML iconHTML

    Barium titanate was prepared by the advanced procedure of mechanochemical synthesis from barium and titanium oxides after 50 hours of milling. The X-ray examination of the milled powders showed the phase evolution during synthesis and the perovskite phase was initiated after 5 hours and was completed after 50 hours. Sintered samples from these nanopowders show different dielectric properties for f... View full abstract»

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  • Investigation of Wo3 and Tio2 Thin Films Used in Photocatalysis

    Publication Year: 2006, Page(s):241 - 244
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3711 KB) | HTML iconHTML

    The aim of the paper is to explain the optical properties of WO 3 and TiO2 films in different environments required for a future utilization as catalysts in wastewater treatment and in building a photoelectrochemical cell (PECC). The crystallinity was investigated using X-ray diffraction and the electrical properties were determined by current-voltage analysis. The optical pr... View full abstract»

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  • Defect Chemistry of Cusbs2

    Publication Year: 2006, Page(s):245 - 248
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3666 KB) | HTML iconHTML

    The CuSbS2 exhibits adequate properties as absorber material in solar cell applications. This paper describes the defect chemistry of the CuSbS2 using lattice reactions combined with electroneutrality conditions and equilibrium constants for each intrinsic defect formation mechanism. From the proposed reactions the conductivity type of the material is indicated: ionic conduct... View full abstract»

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  • Memory Effects in Si/SiO2/Nano-Crystalline PbS Heterostructures

    Publication Year: 2006, Page(s):249 - 252
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    The mechanism of charge storage in p Si/SiO2/nano-crystalline PbS heterostructures is investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at different frequencies. The nanocrystalline thin PbS films were obtained using the chemical bath deposition method with a shorter reaction time and without doping element in the reducing bath. The C-V curves show ... View full abstract»

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  • Annealing Effects on Properties of Ba(Zn1/3Ta2/3)O3 Dielectric Materials

    Publication Year: 2006, Page(s):253 - 256
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    Ba(Zn1/3Ta2/3)O3 dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400-1600degC for 4 h. Morphostructural characterization was performed by using SEM and XRD. The dielectric properties were measured in the microwave range (6-7 GHz). An additional annealing at 1400 degC for 10 hours was performed in o... View full abstract»

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  • Calixarene-Doped Polyaniline for Applications in Sensing

    Publication Year: 2006, Page(s):257 - 260
    Cited by:  Papers (5)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3685 KB) | HTML iconHTML

    Synthesis of a new type of calixarene-doped polyaniline (PANI) is reported. Polyaniline as a free base (emeraldine) was synthesized by a chemical method, in the presence of HCl and ammonium peroxodisulphate as oxidant. PANI was doped with p-sulfonatocalix|4|arene. The structure of the protonic acid doped- PANI was investigated by infrared and UV-VIS spectroscopies. The spectral features of dopant ... View full abstract»

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  • Characterization of Pulsed-Laser-Deposited Aln Films as a Gate Dielectric in Aln-Si Mis Structures

    Publication Year: 2006, Page(s):261 - 264
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    MIS structures with AlN films deposited on p-Si substrates by pulsed laser deposition (PLD) were analyzed with respect to their capacitance-voltage and conductance-voltage characteristics, measured at different frequencies and temperatures of 77 and 300 K. The current-voltage characteristics were independent on temperature. It was shown that inter-trap tunneling could adequately account for the ob... View full abstract»

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  • Physics of Materials 2

    Publication Year: 2006, Page(s): 265
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  • Fabrication of Porous Sol-Gel Cathodes for Li Batteries

    Publication Year: 2006, Page(s):267 - 270
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3425 KB) | HTML iconHTML

    Lithium batteries have found a wide range of applications due to their very compact energy packing and effective cost. Theoretically Li-cells can hold up to 5V, however to date no mass-produced rechargeable battery surpassed 4 V. The structure here analyzed consists of: lithium porous cathode, solid electrolyte and silver anode. A spinel LiNi0.4X0.1Mn1.5O... View full abstract»

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  • Characterization of Ba0.5Sr0.5TiO3 Thin Films For Tuneable Devices

    Publication Year: 2006, Page(s):271 - 274
    Cited by:  Papers (1)
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    Barium strontium titanate (BST) bulk ceramic was used as target for PLD thin film deposition. In order to avoid stoichiometry modification during the deposition, a more reactive oxidant ambient in the chamber was produced by using a radiofrequency discharge 13.56 MHz, 150 W. Thin films of stoichiometric BST was deposited on alumina substrate with the thickness between 400 and 500 nm heated at 650d... View full abstract»

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  • Light-Induced Properties in Polyimides Containing Side Azobenzene Groups

    Publication Year: 2006, Page(s):275 - 278
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3828 KB) | HTML iconHTML

    A series of new photosensitive polymers have been synthesized by polycondensation reaction of diamines containing azobenzene moieties with hexafluoroisopropylidene diphthalic anhydride or with a diacid chloride containing hexafluoroisopropylidene or dimethylsilane. These amorphous polymers have good solubility in organic solvents and good film forming properties. The irradiation of polymer films w... View full abstract»

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  • Temperature Dependence of the Main Piezoelectric Parameters of a Nb-Li Doped Pzt Ceramic

    Publication Year: 2006, Page(s):279 - 282
    Cited by:  Papers (2)
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    A study was made on the temperature behavior of the main piezoelectric parameters, namely the electromechanical coupling factor k p, the mechanical quality factor Qm, the dielectric permittivity (real and imaginary part), the loss tangent tg and the piezoelectric charge constants d33 and d31 of a soft type piezoelectric material. It was evidenced that te... View full abstract»

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  • Photoinduced Optical Anisotropy in Modified Polyimides

    Publication Year: 2006, Page(s):283 - 286
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    New poly(amide-imide)s containing cinnamoyl and azobenzene units have been synthesized by direct polycondensation reaction of two diacids having preformed cinnamoyl units and a diamine incorporating azobenzene groups, using triphenyl phosphite and pyridine as condensing agents. The polymers were readily soluble in various organic solvents and gave thin films by casting from such solutions. They sh... View full abstract»

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  • Sensing Properties of Tellurium Based Thin Films to Oxygen, Nitrogen and Water Vapour

    Publication Year: 2006, Page(s):287 - 290
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    Effect of O2, N2 and H20 to electrical behaviour of tellurium-based films has been studied at temperatures between 20 degC and 70 degC. The increase of oxygen partial pressure in N O2+ O2 carrier gas results in a nearly linear decreasing of the film resistance. The complete impulsive substitution of nitrogen by oxygen decreases the resistance ... View full abstract»

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  • Advanced Device Structures

    Publication Year: 2006, Page(s): 291
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