By Topic

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date 9-13 May 1995

Filter Results

Displaying Results 1 - 25 of 222
  • InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique

    Publication Year: 1995 , Page(s): 717 - 720
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (333 KB)  

    We have successfully integrated a mode size converter with a PBH strained MQW InGaAsP/InP laser diode using the SMG technique. The laser performance is hardly affected by the taper integration. Due to the taper, the coupling loss to a cleaved fibre is reduced from 9.3 dB for a non-tapered laser to 3.3 dB for a laser with a 200 /spl mu/m taper. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Author index

    Publication Year: 1995
    Save to Project icon | Request Permissions | PDF file iconPDF (347 KB)  
    Freely Available from IEEE
  • Seventh International Conference on Indium Phosphide and Related Materials

    Publication Year: 1995
    Save to Project icon | Request Permissions | PDF file iconPDF (708 KB)  
    Freely Available from IEEE
  • Fabrication of InP-based quantum-wires and its application to lasers

    Publication Year: 1995 , Page(s): 620 - 623
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (340 KB)  

    Fabrication technologies of GaInAs(P)/InP long-wavelength lasers consisting of quantum-wire active region are investigated. A combination of an electron-beam (EB) lithography, a fine-pattern etching, and succeeding OMVPE regrowth became more or less reliable process, that was confirmed through a low threshold current room-temperature CW operation of strained quasi-quantum-wire lasers. Measurements of photoluminescence (PL) intensity dependence on etched wire width revealed a low-damage property of electron-cyclotron-resonance reactive-ion-beam-etching (ECR-RIBE) with Cl2 gas by applying negative acceleration voltage to the sample. An introduction of a surface cleaning process with H2 gas just after the Cl2 ECR-RIBE was found to be effective for further reduction of damage especially for the wire width from 10 to 40 nm View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The influence of PCl3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE

    Publication Year: 1995 , Page(s): 329 - 332
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (820 KB)  

    The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Effects of hydrogen on InP light-emitting devices etched in a methane-hydrogen environment

    Publication Year: 1995 , Page(s): 624 - 627
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (332 KB)  

    Research has been conducted on the physical damage and hydrogenation effects during RF plasma exposure and epitaxial growth in the III-V material system. Device consequences of this damage or chemical alteration have received less attention, particularly in active light emitting devices. This paper discusses these effects for lasers and edge emitting light-emitting diodes (EELEDs) which use a ridge waveguide structure. By using analysis techniques such as SIMS we have concluded that methane-hydrogen reactive ion etching of InP induces hydrogen levels in an active device which are high enough to significantly alter the device properties. The decrease in light output is substantial, but subsequent annealing times as short as 1 min. at 430°C can restore power dramatically View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Fabrication of 60 nm-pitch ordered InP pillars by EB-lithography and anodization

    Publication Year: 1995 , Page(s): 628 - 631
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (280 KB)  

    We obtained 60 nm-pitch ordered InP triangle vertical pillars with high density of around 50% by combining electron-beam (EB) lithography and anodization techniques. Furthermore, adopting the dry-etching transfer onto SiO2, we obtained 40 nm-pitch ordered pillars and observed photoluminescence intensity comparable to that from bulk InP substrate that indicates negligible non-radiative recombination View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Type 1.5 coupled quantum wells for electroabsorption modulation with low electric fields

    Publication Year: 1995 , Page(s): 547 - 550
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (244 KB)  

    A new quantum structure is proposed, the type 1.5 quantum well, which can be designed to modulate the optical transition oscillator strength with a very low field. The peaking of the oscillator strength and absorption with a low applied field is a practical advantage for modulator applications to reduce the drive voltage and increase the maximum absorption View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High electron mobility 18,300 cm2/V·s InAlAs/InGaAs pseudomorphic structure by channel indium composition modulation

    Publication Year: 1995 , Page(s): 733 - 736
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (384 KB)  

    We have successfully obtained the highest electron mobility yet reported for an InAlAs/InGaAs heterostructure using an indium composition modulated channel. With this channel, we have successfully obtained an In0.8Ga0.2As (2 nm)/InAs (4 nm)/In0.8Ga0.2As (4 nm) channel within InGaAs layers, with smooth In0.52Al0.48As/In0.53 Ga0.47As/In0.8Ga0.2As/InAs/In 0.8Ga0.2As heterointerfaces. The thick, high In-content channel in our new structure produced superior electron confinement, contributing to the highest room temperature mobility yet reported for InP-based pseudomorphic InAlAs/InGaAs heterostructures View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Fabrication of a polarization insensitive electroabsorption modulator with strained InGaAs/InAlAs MQW by MOVPE

    Publication Year: 1995 , Page(s): 61 - 64
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (296 KB)  

    Strained InGaAs/InAlAs multi-quantum well (MQW) layers are grown by a low pressure MOVPE. Introduction of compressive strain into an InAlAs barrier layer against a tensile strained well layer makes it possible to grow an MQW layer with good quality. By using these layers, we have also demonstrated strained InGaAs/InAlAs MQW electroabsorption modulators with a polarization insensitivity View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Improvement in Schottky diode characteristics of metal-In0.52 Al0.48As contact using an in situ photochemical etching and surface passivation process

    Publication Year: 1995 , Page(s): 821 - 824
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (316 KB)  

    HBr and H2S gases were used together with a 172 nm excimer lamp and a deep UV-lamp for photochemical etching and surface passivation of the InGaAs/InAlAs material system. Schottky diodes were fabricated on n-In0.52Al0.48As by electron beam evaporation of Mo/Ti/Pt/Au with the consequent alloying. AES and XPS measurements of the passivated InAlAs surface reveal that the photochemically generated S*-radicals are capable of removing In-O and As-O bonds from the surface and replacing them with In-S and As-S bonds. The reverse bias leakage current of the surface passivated diodes were reduced by 3 orders of magnitude compared to diodes with an unpassivated surface. We obtained an effective barrier height of 0.79 eV and an ideality factor of 1.03, for the fabricated diodes after surface passivation View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High-speed InP-based strained MQW ridge waveguide laser

    Publication Year: 1995 , Page(s): 476 - 479
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (240 KB)  

    A high-speed ridge waveguide laser with undoped strained MQW active region was fabricated and characterized. The lasers demonstrated typical threshold currents of ~20 mA. The electrical impedance of the laser demonstrates -3 dB bandwidths >34 GHz at high bias currents, indicating that the parasitics in our devices are very small. The best laser demonstrated a -3 dB modulation bandwidth of 20 GHz. This is the highest bandwidth achieved for a ridge waveguide laser operating at 1.55 μm View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Intersubband transitions in conduction band quantum wells: the role of energy band gaps and band off-sets

    Publication Year: 1995 , Page(s): 555 - 556
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (160 KB)  

    A new 14-band k·p analysis of optical intersubband transitions in conduction band quantum wells demonstrates the importance of the energy band gap and the band off-sets in determining the strength of such transitions, In particular it is found (1) that a narrow band gap enhances the TE activity, and is therefore desirable, because of the importance of band mixing, and (2) that carrier confinement in both the valence band (Type I quantum well) and the upper conduction band is necessary for strong TE activity. This paper discusses these observations and supports these conclusions with measurements made on Type-II InP/InAlAs quantum wells View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique

    Publication Year: 1995 , Page(s): 436 - 439
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (304 KB)  

    The purpose of this paper is to investigate the applicability of the Si interface control layer (ICL) based passivation technique to construction of InGaAs insulated gate field effect transistor (IGFET) devices such as MISFETs and HEMTs. HF treatment were applied to InGaAs and InAlAs surfaces. Basic insulator-semiconductor structures were fabricated and characterized by XPS, I-V and MIS C-V techniques. Fat MISFETs and HEMTs were also fabricated and the feasibility of the present technique is successfully demonstrated View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy

    Publication Year: 1995 , Page(s): 173 - 174
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (112 KB)  

    We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous iron Fe(CO)5. SIMS analysis shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017-5×1019 cm-3 range studied. Use of Fe(CO)5 as an iron source also leads to high αp 1018 cm-3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ-cm resistivity for a broad range of Fe(CO)5 flow rates View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Multicomponent zone melting growth of ternary InGaAs bulk crystal

    Publication Year: 1995 , Page(s): 45 - 48
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (340 KB)  

    A 13 mm thick InxGa1-xAs crystal with n=0.14 has been successfully grown by a method of multicomponent zone melting growth. The alloy composition gradually changes along the growth direction, and this change is well explained by a temperature profile. A good uniformity in the alloy composition along the direction normal to the growth was also achieved View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Strain effects in InAsP/InP MQW modulators for 1.06 μm operation

    Publication Year: 1995 , Page(s): 536 - 539
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (248 KB)  

    In summary we have studied the electroabsorption response of InAsP-InP MQW p-i-n structures grown for the first time by SS-MBE. Some partial relaxation has taken place due to the cumulative effects of strain in successive QWs. Despite this the electrical properties of the devices were not degraded and demonstrated leakage currents of less than InA for up to 16 V reverse bias View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 1.3 μm GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD

    Publication Year: 1995 , Page(s): 488 - 491
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (328 KB)  

    In order to improve a buried heterostructure (BH) for GaInAsP/InP vertical cavity surface emitting laser (VCSEL) regrown by MOCVD, we have introduced a square mesa top pattern, of which side was at angle of 450 to <011> direction. A 1 μm GaInAsP/InP square buried heterostructure (SBH) VCSEL with this mesa structure has been demonstrated and low threshold CW oscillation (threshold current Ith=0.45 mA) at 77 K and low threshold room temperature pulsed oscillation (Ith=12 mA) were obtained View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Graded-GaAs1-xPx base in heterojunction bipolar transistors with InGaP emitters

    Publication Year: 1995 , Page(s): 456 - 459
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (256 KB)  

    We have fabricated the graded-GaAsP base HBTs with InGaP emitters for the first time. It was confirmed that heavy carbon-doping into GaAsP, as well as GaAs, could be realized by using MOCVD. The measured current gain was as high as over 100 at a collector current density (J c) of 3×104 A/cm2. Furthermore, compared with the uniform-GaAs base HBTs, current-gain enhancement due to the built-in field in the base of the graded-base HBTs was also confirmed in a range of Jc=1×102 A/cm2 to 3×104 A/cm2 View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High Gm MBE-grown InP based HEMTs with a very low contact resistance triple capping layer

    Publication Year: 1995 , Page(s): 741 - 744
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (332 KB)  

    A highly-doped triple capping layer consisting of n+-In 0.53Ga0.47As, n+-In0.52Al 0.48As, and n+-In0.53Ga0.47As was investigated with the goal of reducing parasitic source resistance in InAlAs/InGaAs HEMTs. Analysis of the source resistance revealed that the contribution of the resistance element at n+-In0.53Ga0.47As/un-In0.52 Al0.48As/un-In0.53Ga0.47As channel hetero-interfaces is as large as 70% of the total source resistance when non-alloyed ohmic electrodes are used. The highly-doped triple capping layer reduces the resistance element of vertical conduction between the capping layer and the 2DEG channel. Thus, source resistance was reduced to 0.57 Ω mm and contact resistance to 3×10-5 Ω cm2 in the HEMTs with a highly-doped triple capping layer. This source resistance is 60% that of HEMTs with a conventional single capping layer, and the contact resistance is one order of magnitude smaller. The low source resistance results in peak extrinsic transconductance as high as 1 S/mm for a device with a 0.4-μm-long gate, which is 42% higher than that of previously reported HEMTs with the same gate length View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • AlGaAsSb buffer/barrier layer on GaAs substrate for InAs channel with high electron properties

    Publication Year: 1995 , Page(s): 440 - 443
    Cited by:  Papers (1)  |  Patents (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (380 KB)  

    InAs/AlGaAsSb deep quantum wells were successfully formed on GaAs substrate and examined for two electron devices: Hall elements (HEs) and field-effect transistors (FETs). With a thin buffer layer of 600 nm AlGaAsSb on a GaAs substrate, we observed high electron mobility of more than 20000 cm2/Vsec and an effective electron velocity of 2.2×107 cm/sec at RT for a 15 nm thick InAs channel. AlGaAsSb, lattice-matched to InAs, was discussed from the viewpoints of insulating property, carrier confinement and oxidization. Reliability data good enough for practical use were also obtained for HEs. We propose AlGaAsSb as a promising buffer/barrier layer material for InAs channel devices on GaAs substrates, and we suggest AlGaAsSb also for InGaAs channel devices View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Reduction of dislocation densities in InP single crystals by the TB-LEC method

    Publication Year: 1995 , Page(s): 97 - 100
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (232 KB)  

    We have developed a modified LEC method with a thermal baffle (TB), by which low dislocation density InP crystals can be grown. In this method, a thermal baffle is set on top of the crucible in order to suppress the gas convection and thus to improve the temperature gradient in the LEC furnace. The dislocation density depends not only on the temperature gradient but also on the other growth conditions, such as crystal/crucible rotational speeds, cooling conditions, and crucible weight. The rotational condition is an important factor for the reduction of the dislocation density since the solid/liquid (SL)interface shape changes with the rotational conditions View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Chemical beam etching of InP in GSMBE

    Publication Year: 1995 , Page(s): 636 - 639
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (412 KB)  

    The Chemical Beam Etching Technique (CBET) of InP and GaAs based materials using Phosphorus or Arsenic chlorides in a ultra high vacuum growth chamber is on attractive method combined with CBE or GSMBE for complex device fabrication. Etching of a few monolayers up to more than one micron on a localized area followed by regrowth in the same ultra high vacuum chamber should produce nearly perfect interfaces and large application, in particular for the realisation of photonic and optoelectronic ICs. In this work, we investigated the controlled etching of InP by CBET using diluted PCl3 in H2 in a GSMBE growth chamber. We report on the etching rate of InP as function of PCl 3 fluence and substrate temperature, the etched surface morphology and the profile at mask edges. We also demonstrate that in situ RHEED can be used during etching as an “atomic layer” precise end point detection View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optical properties of self-organized InGaAs/InP dots

    Publication Year: 1995 , Page(s): 311 - 314
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (416 KB)  

    The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In0.5Ga0.5As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Highly controlled InGaAs(P)/InP MQW interfaces grown by MOVPE using TBA and TBP precursors

    Publication Year: 1995 , Page(s): 119 - 121
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (192 KB)  

    Reports that abrupt InGaAs/InP MQW interfaces are realized over 2-inch wafers by employing tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP) in place of AsH3 and PH3 , owing to elimination of the arsenic contamination into the InP layer after InGaAs growth and suppression of the As-P exchange reaction at the interfaces View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.