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# Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

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Displaying Results 1 - 25 of 136
• ### 1995 International Semiconductor Conference. CAS '95 Proceedings

Publication Year: 1995
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• ### Author index

Publication Year: 1995
| PDF (270 KB)
• ### A new SPICE model for the reverse bias region of a semiconductor diode

Publication Year: 1995, Page(s):73 - 76
| | PDF (253 KB)

The paper presents a new analytical model for the reverse bias region of the current-voltage characteristic of a semiconductor diode. This model has the advantage that a single analytical function is used for modelling both the saturation and the regulation regions of the reverse biased diode. The function takes into account the real dependence of the reverse current I/sub R/ versus the reverse ap... View full abstract»

• ### Influence and extraction of series resistances in pseudo-MOS transistors

Publication Year: 1995, Page(s):557 - 560
| | PDF (414 KB)

The pseudo-MOS transistor technique is used for quick evaluation of several types of SOI wafers: SIMOX from different origins and wafer bonding. The effective mobility for electrons and holes, threshold voltages, film doping, interface state density and series resistances are extracted as a function of probe pressure. The paper focuses on new methods for the extraction of series resistances in MOS... View full abstract»

• ### An all-with-integers MOSFET simulator: from software to hardware codes

Publication Year: 1995, Page(s):593 - 596
Cited by:  Papers (1)
| | PDF (414 KB)

This paper examines the problem of how to transfer well known Monte Carlo algorithms for device simulation having the form of a software code into a hardware form (wired-up processor) in view of renewed and highly dedicated applications. View full abstract»

• ### Implementation of Schottky boundary conditions in TRENDY

Publication Year: 1995, Page(s):597 - 600
| | PDF (271 KB)

This paper describes the numerical implementation of Schottky boundary conditions in the basic module of the two-dimensional process and device simulator TRENDY developed at MESA Research Institute, University of Twente, The Netherlands. The results of simulation of a test structure are represented. View full abstract»

• ### Integrated structure including a waveguide and a photodiode for a chemo-optical sensor on silicon

Publication Year: 1995, Page(s):449 - 452
Cited by:  Papers (2)
| | PDF (372 KB)

The paper describes the design of an absorptive chemo-optical sensor. The sensor includes an integrated silicon structure, composed of waveguides coupled to photodiodes. The transducer is a chemical layer, whose absorption coefficient is dependent on the concentration of an external substance. First experimental results are also presented View full abstract»

• ### Latent interface-trap generation during thermal annealing of γ-ray irradiated power VDMOSFETs

Publication Year: 1995, Page(s):215 - 218
| | PDF (304 KB)

The behaviour of the threshold voltage in commercial n-channel power VDMOSFETs during biased thermal annealing, following γ-ray radiation exposure, is investigated. It is found that rebound' effect, observed in transistors irradiated and annealed with positive gate bias, is mainly due to the latent' interface-trap generation. Possible mechanism for latent interface-trap buildup is proposed View full abstract»

• ### Photodetector with controlled photosensitivity in 1.1-1.6 μm spectral range

Publication Year: 1995, Page(s):429 - 432
| | PDF (376 KB)

The results on the elaboration of photodetectors based on InGaAsP-InGaAs-InP heterostructures with controlled photosensitivity in 1.1-1.6 μm spectral range are presented. The appearance of photosensitivity dependence on bias voltages and the causes of the threshold character of this dependence for such structures are discussed View full abstract»

• ### Fast neutron irradiation induced clusters in silicon-single-crystals, using X-ray diffraction

Publication Year: 1995, Page(s):195 - 198
| | PDF (408 KB)

Clusters induced as effects of exposing silicon single-crystals in fast neutron reactor ambiant are studied as a damage phenomenon used in inducing well controlled and reproducible effects to be used in semiconductor materials and device technology. Single-silicon-crystal X-ray diffraction has become a well-established branch of X-ray crystallography. Widely used as a method of investigation of bu... View full abstract»

• ### Model for the electrical conductance transient behaviour in thick film SnO2 semiconductor gas sensors

Publication Year: 1995, Page(s):473 - 476
| | PDF (320 KB)

An improved nonlinear diffusion-reaction model describing the conductance transient behaviour in thick film SnO2 n-type semiconductor gas sensors, which are subject to a step change in gas concentration, is introduced in this study. This model depicts accurately the experimental conductance transient of these sensors View full abstract»

• ### Soft simulator for optimal design of curved-profile grating couplers for thin film waveguides

Publication Year: 1995, Page(s):445 - 448
Cited by:  Papers (1)
| | PDF (356 KB)

We investigated the excitation and de-excitation of TE and TM guided modes in a planar dielectric waveguide with curved-profile grating couplers, and developed a soft simulator for these couplers. This simulator has two functions: (1) optimal design of input and output grating couplers; (2) minimization of the effect of technological parameters variation during fabrication View full abstract»

• ### A radiation induced failure mechanism for power semiconductor devices

Publication Year: 1995, Page(s):211 - 214
| | PDF (260 KB)

A failure mechanism is proposed which accounts satisfactorily for a recently discovered definitive electric short circuit between the operating power device main terminals, caused by a high energy charged particle. When such a particle crosses the space charge region of a device silicon PN junction which is reverse biased near to the avalanche breakdown voltage value, an instantaneous decrease of ... View full abstract»

• ### An efficient BJT transmission line model for circuit simulators

Publication Year: 1995, Page(s):65 - 68
Cited by:  Papers (2)
| | PDF (288 KB)

A novel non-quasi-static BJT model suitable for application in circuit simulators is described. Its capability is demonstrated through simulated results of DC, AC and transient analysis View full abstract»

• ### A steady-state analytical model for the trench insulated gate bipolar transistor

Publication Year: 1995, Page(s):49 - 52
Cited by:  Papers (1)
| | PDF (348 KB)

A steady-state, physically-based analytical model for the trench Insulated Gate Bipolar Transistor (IGBT) which accounts for a combined PIN diode-PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimise... View full abstract»

• ### Theory of the excess carrier recombination processes in heterostructures of type II

Publication Year: 1995, Page(s):253 - 256
| | PDF (316 KB)

The mechanism of Auger recombination (AR) in type II heterostructures has been investigated theoretically for the first time. It is shown that the AR rate is a power function of temperature rather than an exponential one as in bulk materials. The possibility of suppression of the AR process is demonstrated for the first time View full abstract»

• ### The superposition of the lattice radiation and reflectivity spectra of tetragonal TeO2 crystals

Publication Year: 1995, Page(s):423 - 426
| | PDF (316 KB)

The superposition of infrared reflectivity spectra end lattice radiation of TeO2 crystals have been investigated. Both radiation spectra at high temperatures and absorption spectra in the two-phonon range for polarizations E||c and E⊥c were performed. It is shown that in the one-phonon range it is possible to reveal two-phonon bands View full abstract»

• ### Investigation of the surface morphology of P-doped LPCVD silicon films

Publication Year: 1995, Page(s):191 - 194
| | PDF (584 KB)

The surface morphology of LPCVD silicon films as a function of P doping concentration has been investigated. The films were deposited in the amorphous phase at 550°C and in the polycrystalline phase at 620°C and were P doped at 1.5×1020 cm-3, 1×1020 cm-3 and 9×1019 cm -3 concentrations. SEM and EDX observat... View full abstract»

• ### Study on the manufacturing technology of GaP-SnO2 structures for ultraviolet radiation sensors

Publication Year: 1995, Page(s):469 - 472
| | PDF (408 KB)

The manufacturing technology of GaP-SnO2 structures for radiation sensors is described in this article. The technological methods are liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolysis for SnO2 deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial ... View full abstract»

• ### Active interference filters using silicon-compatible materials

Publication Year: 1995, Page(s):441 - 444
| | PDF (344 KB)

The basic aim of this work is to obtain optical detectors with a spectral response programmable by design using the combined response of polysilicon and monocrystalline silicon photodiodes. Such an approach is needed in order to obtain a colour sensor with improved flexibility and control of its characteristic parameters View full abstract»

• ### Behaviour of plastic encapsulated devices in marine environment

Publication Year: 1995, Page(s):207 - 210
| | PDF (208 KB)

The behaviour of two types of plastic encapsulated devices (complementary NPN and PNP transistors) in salt mist and cycling salt mist tests was studied. The results show that cycling salt mist test accelerates the salt mist test and the acceleration factors were calculated for the degradation mechanisms involved View full abstract»

• ### Simulation of charge transport phenomena in the channel of deep submicron MOSFETs

Publication Year: 1995, Page(s):61 - 64
| | PDF (264 KB)

This paper presents an approach of the charge transport phenomena simulation in the channel of a nMOSFET. The model given is based on the relaxation equations of the speed and energy of electrons. The looping phenomena on the output characteristics Id(Vds) is illustrated as a consequence of the response of the interface traps View full abstract»

• ### InxGa1-xSb of highly uniform composition

Publication Year: 1995, Page(s):297 - 300
| | PDF (244 KB)

This paper reports on InxGa1-xSb (x=0.20) bulk crystals of uniform composition obtained by rapid, direct synthesis from the elements. The uniformity of the composition has been checked out by Neutron Activation Analysis (NAA). Hall effect and specific resistance measurements have been performed within the temperature range of 77 K-310 K. For all the investigated samples p-typ... View full abstract»

• ### A linear current to position converter for “CDD” functional design

Publication Year: 1995, Page(s):587 - 590
| | PDF (288 KB)

The paper presents a method for a current to position converter that provides a linear dependence between the gap of two currents and centroid position of a charge domain on a given contour. A numerical method is used to model the potential distribution on the edge of a resistive layer where a current is injected. The optimal shape of the layer and the position of the injection points are determin... View full abstract»

• ### Semiconducting transition metal silicide films-preparation, properties and possible applications

Publication Year: 1995, Page(s):531 - 540
| | PDF (1176 KB)

A short review is given on the basic properties of semiconducting transition metal silicides and on the methods of their preparation. Special emphasis is put on the electronic and optical properties. Most of the data reported refer to β-FeSi2. Possible applications of the semiconducting silicides are outlined View full abstract»