# IEEE Journal of Selected Topics in Quantum Electronics

## Filter Results

Displaying Results 1 - 25 of 31
• ### Editorial

Publication Year: 2018, Article Sequence Number: 0200301
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• ### Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings

Publication Year: 2018, Article Sequence Number: 1900307
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The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially indirect optical transitions. This phenomenon limits the application of type-II nanostructures in photon detections. In this paper, we show that with proper arrangements of conduction barriers, the formation of quasi-bound states can significantly boost up the absorption of type-II coupled quantum rin... View full abstract»

• ### Filter-Free Narrowband Photodetectors Employing Colloidal Quantum Dots

Publication Year: 2018, Article Sequence Number: 1900406
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Tuning the electronic bandgap of quantum dots via the quantum size-effect enables the tailored spectral response of quantum dot photodetectors, light emitting diodes, and solar cells. Chemically synthesized colloidal quantum dot (CQD) provides an option to produce such quantum material in an inexpensive way. Here, we propose an approach to fabricate filter-free narrowband photodetectors in near-in... View full abstract»

• ### Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers

Publication Year: 2018, Article Sequence Number: 1900105
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In this paper, the study of the photoconductivity in self-assembled InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 to 400 K is reported. These antennas are aimed to work in conjunction with quantum dot semiconductor lasers to effectively generate pulsed and continuous wave terahertz radiation. For the efficient ope... View full abstract»

• ### Laterally Biased Quantum-Well Infrared Photodetectors Operating at Room Temperature With Low Dark Currents

Publication Year: 2018, Article Sequence Number: 1900206
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The technology of quantum-well infrared photodetectors has been used to fabricate focal plane arrays as the active element of infrared cameras. These arrays must be cooled down to 77 K due to the large dark current that they exhibit at higher operating temperatures. Among the different alternatives proposed to overcome this drawback, the lateral conduction scheme has been successfully employed in ... View full abstract»

• ### 32 × 32 CMOS SPAD Imager for Gated Imaging, Photon Timing, and Photon Coincidence

Publication Year: 2018, Article Sequence Number: 3800706
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We present the design and simulations of a single-photon sensitive imager based on single photon avalanche diodes (SPADs) with an innovative pixel architecture that includes four separate SPADs with independent active time-gating and quenching circuit, a shared time-to-digital converter (TDC) with 50-ps resolution, four independent photon counters, and multiple operation modes. The TDC is driven b... View full abstract»

• ### Thin $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga$_{\boldsymbol{x}}$As $_{\mathbf{0.56}}$Sb $_{\mathbf{0.44}}$ Diodes With Low Excess Noise

Publication Year: 2018, Article Sequence Number: 3800105
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Thin avalanche layers have been adopted to achieve low excess noise and high-gain bandwidth products in InP and InAlAs avalanche photodiodes. In this paper, we report the excess noise characterization in a series of Al1-xGaxAs0.56 Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm. These alloys, lattice matched to InP, sh... View full abstract»

• ### Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode With Dual Charge Layers for High-Speed and Low Dark Current Performances

Publication Year: 2018, Article Sequence Number: 3800208
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A novel type of top-illuminated, etch-mesa In0.52Al0.48As-based avalanche photodiode (APD) with high-speed (>25 Gb/s), low dark current performance has been demonstrated. The 25G APD device is composed of n-side down design with the In0.52Al0.48As multiplication (M) layer buried at the bottom to avoid the issues of surface breakdown and complex guard ring structure. In addition, we demonstrate ... View full abstract»

• ### Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection

Publication Year: 2018, Article Sequence Number: 3800305
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We present here the noise properties of the 4H-SiC avalanche photodiodes (APD) operated in Geiger mode. After-pulse events together with the dark count rate were measured at different temperatures. We found that at a certain bias voltage, the after-pulse probability of the 4H-SiC APD was dependent on the incident photon flux. This interesting observation may be useful to build a photon-number reso... View full abstract»

• ### Avalanche Photodiodes Based on the AlInAsSb Materials System

Publication Year: 2018, Article Sequence Number: 3800407
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We report avalanche photodiodes (APDs) fabricated from high-aluminum-content AlxIn1-xAsySb1-y lattice matched to GaSb that is grown within the miscibility gap using a digital alloy approach. The material was initially characterized through a series of AlxIn1-x AsySb1-y (x = 0.3, 0.4, 0.5, 0.6, 0.7) p-i-n struct... View full abstract»

• ### Large-Format Geiger-Mode Avalanche Photodiode Arrays and Readout Circuits

Publication Year: 2018, Article Sequence Number: 3800510
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Over the past 20 years, we have developed arrays of custom-fabricated silicon and InP Geiger-mode avalanche photodiode arrays, CMOS readout circuits to digitally count or time stamp single-photon detection events, and techniques to integrate these two components to make back-illuminated solid-state image sensors for lidar, optical communications, and passive imaging. Starting with 4 × 4 arr... View full abstract»

• ### High Efficiency, Ultra-High-Density Silicon Photomultipliers

Publication Year: 2018, Article Sequence Number: 3800608
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Silicon photomultipliers (SiPMs) are arrays of many single-photon avalanche diodes (SPADs), all connected in parallel. Each SPAD is sensitive to a single photon. The SiPM output is proportional to the number of detected photons. These sensors are becoming more and more popular in different applications and they have been significantly improved over last years, decreasing the noise, increasing the ... View full abstract»

• ### Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems

Publication Year: 2018, Article Sequence Number: 3800811
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Design of avalanche photodiodes (APDs) and their limiting factors on operating speed and responsivity are discussed with consideration of their application to optical receivers for optical-fiber communications systems. Each type of APD, with variable structures such as vertical illumination and waveguides, has inherent performance tradeoffs related to responsivity, carrier transit time, capacitanc... View full abstract»

• ### Germanium on Silicon Avalanche Photodiode

Publication Year: 2018, Article Sequence Number: 3800911
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Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their the properties of high performance and low cost. The sensitivity of 10Gb/s APD reached -29.5dBm at 1550 nm with the bit error rate of 1 �... View full abstract»

• ### Performance Optimization and Improvement of Silicon Avalanche Photodetectors in Standard CMOS Technology

Publication Year: 2018, Article Sequence Number: 3801013
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This paper discusses design optimization for silicon avalanche photodetectors (APDs) fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology in order to achieve the highest possible performance. Such factors as PN junctions, guard ring structures, active areas, and back-end structures are considered for the optimization. CMOS-APDs reflecting varying aspects of these factor... View full abstract»

• ### Crosstalk Characterization of a Two-Tier Pixelated Avalanche Sensor for Charged Particle Detection

Publication Year: 2018, Article Sequence Number: 3801108
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In this paper, a complete optical crosstalk characterization of a Geiger-mode pixelated avalanche detector for particle tracking application is presented. The device is composed of two tiers of CMOS-integrated avalanche detectors bump bonded with pixel-level interconnects, with each layer containing a 16 × 48 detector array. On-chip coincidence detection circuits, designed to discriminate b... View full abstract»

• ### Single-Photon Avalanche Diodes in a 0.16 μm BCD Technology With Sharp Timing Response and Red-Enhanced Sensitivity

Publication Year: 2018, Article Sequence Number: 3801209
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CMOS single-photon avalanche diodes (SPADs) have recently become an emerging imaging technology for applications requiring high sensitivity and high frame-rate in the visible and near-infrared range. However, a higher photon detection efficiency (PDE), particularly in the 700-950 nm range, is highly desirable for many growing markets, such as eye-safe three-dimensional imaging (LIDAR). In this pap... View full abstract»

• ### Single-Photon Avalanche Photodiode Based Fiber Optic Receiver for Up to 200 Mb/s

Publication Year: 2018, Article Sequence Number: 3801308
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The first fully integrated receiver based on single-photon avalanche diodes (SPADs) for data rates of up to 200 Mb/s is reported. An array of four SPADs in combination with quenching circuits and a short dead time of 3.5 ns is fabricated in a 0.35 μm CMOS process. The responses of the SPADs are combined using an integrated digital latch-type processing ... View full abstract»

• ### Analysis of Extended Threshold Wavelength Photoresponse in Nonsymmetrical p-GaAs/AlGaAs Heterostructure Photodetectors

Publication Year: 2018, Article Sequence Number: 3801407
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We analyze the extended threshold wavelength photoresponse beyond the standard threshold limit (λt = 1.24/Δ, where Δ is the activation energy) in nonsymmetrical pGaAs/AlGaAs heterostructure photodetectors with a barrier energy offset. We propose that hot-cold hole carrier interactions in the p-GaAs absorber are responsible for the threshold wavelength extension. Exp... View full abstract»

• ### Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes

Publication Year: 2018, Article Sequence Number: 3801506
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Silicon-based single photon avalanche diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has, however, been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this paper, we present a statistical simulation model for silicon SPADs that is capable of predicting ... View full abstract»

• ### Millimeter-Wave Integrated Photoreceivers for High Data Rate Photonic Wireless Communication

Publication Year: 2018, Article Sequence Number: 3900109
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We report on the use of 30 and 100 GHz integrated millimeter-wave photoreceivers in high data rate photonic wireless communication. The role of the bandwidth of a narrow-band photoreceiver in increasing the data rate of wireless single carrier transmission is discussed. An 11-GHz bandwidth photoreceiver achieved a data rate of 44.6 Gb/s using an 8 GBd, 64-QAM (quadrature amplitude modulation) sign... View full abstract»

• ### Injection-Locked Coherent Reception Through an Externally Modulated Laser

Publication Year: 2018, Article Sequence Number: 3900207
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A lean coherent receiver based on an externally modulated laser is presented. Reception is conducted in virtue of the optical detection capability of a monolithically integrated high-bandwidth electroabsorption modulator and its distributed feedback laser section that serves as a local oscillator. The in-line configuration of the receiver with its partial feed-through of the incident data signal t... View full abstract»

• ### All-Silicon Waveguide Photodetection for Low-Bias Power Monitoring and 20-km 28-Gb/s NRZ-OOK Signal Transmission

Publication Year: 2018, Article Sequence Number: 4400207
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We investigate the detection characteristics of a vertical p-n junction embedded waveguide in the low-gain region and strong avalanche gain region. Due to the “L” shape p-n junction and relatively high doping concentration, the photon absorption is enhanced and the working bias is reduced. The detection has linear response to input power in a wide dynamic range and continuous respons... View full abstract»

• ### Analysis and Design of Photoconductive Antenna Using Spatially Dispersive Graphene Strips with Parallel-Plate Configuration

Publication Year: 2018, Article Sequence Number: 4600109
Cited by:  Papers (2)
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In this paper, a photoconductive antenna (PCA) is designed using spatially dispersive graphene strips (GSs) with parallel-plate configuration. This configuration maintains the properties of a single GS and at the same time provides more tunability for designing a graphene-based PCA (GPCA). When a GS is surrounded by a high-index media, propagating wave vector along the structure becomes spatially ... View full abstract»

• ### Photo-thermoelectric Current Enhancement in Graphene-Based Photodetectors Using Plasmonic Nanostructures

Publication Year: 2018, Article Sequence Number: 4600207
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A promising way to enhance channel absorption in graphene-based photodetectors is using plasmonic nanostructures. Here, we show that by using metallic nano-gratings on top of the electrodes, an asymmetric hot carrier temperature profile with high intensity along the graphene channel is created. We show that this asymmetric profile creates a photo-thermoelectric (PTE) current even with scenarios li... View full abstract»

## Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. José Capmany
Universitat Politècnica de València, Spain Photonics Research Labs, ITEAM Research Institute
Virginia Polytechnic Institute & State University