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# IEEE Journal of Selected Topics in Quantum Electronics

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Displaying Results 1 - 25 of 56
• ### Front Cover

Publication Year: 2013, Article Sequence Number: 0001801
| PDF (174 KB)
• ### IEEE Journal of Selected Topics in Quantum Electronics publication information

Publication Year: 2013, Article Sequence Number: 0001901
| PDF (138 KB)
• ### Table of contents

Publication Year: 2013, Article Sequence Number: 0100503
| PDF (117 KB)
• ### Introduction to the Issue on Numerical Simulation of Optoelectronic Devices

Publication Year: 2013, Article Sequence Number: 0200602
| PDF (192 KB) | HTML
• ### Nonequilibrium Green’s Function Model for Simulation of Quantum Cascade Laser Devices Under Operating Conditions

Publication Year: 2013, Article Sequence Number: 1200611
Cited by:  Papers (25)
| | PDF (670 KB) | HTML

A simulation scheme based on nonequilibrium Green's functions for biased periodic semiconductor heterostructure devices is presented in detail. The implementation can determine current and optical gain both for small and large optical fields. Specific results for superlattices, quantum cascade lasers, and quantum cascade detectors are shown which demonstrate the capabilities of the approach. View full abstract»

• ### Theoretical Analysis of Tunable Three-Section Slotted Fabry–Perot Lasers Based on Time-Domain Traveling-Wave Model

Publication Year: 2013, Article Sequence Number: 1503108
Cited by:  Papers (2)
| | PDF (903 KB) | HTML

In this paper, we present a simple time-domain traveling-wave dynamic model for the simulation of wavelength tunable three-section slotted Fabry-Perot (3s-SFP) semiconductor lasers. The longitudinal spatial hole burning, the nonlinear gain compression, and the refractive index changes with carrier density are included in this model. The slot structure is characterized by using the boundary conditi... View full abstract»

• ### Sampled Grating DFB Laser Array by Periodic Injection Blocking

Publication Year: 2013, Article Sequence Number: 1503008
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We present a novel multiwavelength laser array with a sampled grating formed by periodically loaded n-doped injection blocking layer on top of the uniform base grating. With an optimized design of the sampled grating as well as the laser operation conditions, all the even order, including the zeroth-order reflections, can be effectively suppressed, leaving only the first-order reflection wavelengt... View full abstract»

• ### Spectral Delay Algebraic Equation Approach to Broad Area Laser Diodes

Publication Year: 2013, Article Sequence Number: 1502808
Cited by:  Papers (7)
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In this study, we discuss an efficient modeling approach for the simulation of broad-area laser diodes. Our method is based on folding the longitudinal propagation dimension into time delays which extend to the lateral dimension and to the influence of diffractive terms the idea of mesh decimation as it is discussed in . We compare the results of the dynamics obtained with our improved model that ... View full abstract»

• ### Self-Consistent Simulation Model and Enhancement of Wavelength Tuning of InGaAsP/InP Multisection DBR Laser Diodes

Publication Year: 2013, Article Sequence Number: 1503311
Cited by:  Papers (5)
| | PDF (1144 KB) | HTML

A detailed investigation of various physical contributions to the refractive index change due to injection of free carriers and their effect on the wavelength tuning in a three-section InGaAsP/InP semiconductor tunable laser diode (TLD) is carried out using Crosslight PICS3D software. A comprehensive numerical model of a TLD is presented with the wavelength tuning based on a simultaneous considera... View full abstract»

• ### Basic Aspects of High-Power Semiconductor Laser Simulation

Publication Year: 2013, Article Sequence Number: 1502913
Cited by:  Papers (14)
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The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the ... View full abstract»

• ### Intracavity Nonlinear Frequency Down-Conversion in a Continuous-Wave Operation Regime of a Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser

Publication Year: 2013, Article Sequence Number: 1702105
Cited by:  Papers (1)
| | PDF (614 KB) | HTML

Steady-state operational characteristics of a dual-wavelength vertical-external-cavity surface-emitting laser (VECSEL) with a nonlinear quasi-phase-matched crystal placed in the laser cavity have been simulated. We have demonstrated the dramatic effect of three-wave nonlinear optical interaction on both the intensity of fundamental optical fields and the carrier concentration in the quantum wells ... View full abstract»

• ### Spatial-Mode Discrimination in Guided and Antiguided Arrays of Long-Wavelength VCSELs

Publication Year: 2013, Article Sequence Number: 1702010
Cited by:  Papers (1)
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Three means of optical confinement imposed on InAlGaAs/InP 1.3 μm VCSEL arrays are investigated with self-consistent numerical model of laser operation. Laterally patterned tunnel junction (TJ), in-build guiding realized with air-gap patterning, and antiguiding schemes are investigated and optimized to achieve single-mode operation. The analysis shows that mode discrimination in laterally p... View full abstract»

• ### Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser

Publication Year: 2013, Article Sequence Number: 1502706
Cited by:  Papers (24)
| | PDF (611 KB) | HTML

In this paper, a theoretical analysis of unstrained GeSn alloys as a laser gain medium was performed. Using the empirical pseudopotential method, the band structure of GeSn alloys was simulated and verified against experimental data. This model shows that GeSn becomes direct bandgap with 6.55% Sn concentration. The optical gain of GeSn alloys with 0-10% Sn concentration was calculated with differe... View full abstract»

• ### Metal-Cavity Surface-Emitting Microlasers With Size Reduction: Theory and Experiment

Publication Year: 2013, Article Sequence Number: 1701809
Cited by:  Papers (1)
| | PDF (896 KB) | HTML

A theoretical model for a metal-cavity surface-emitting microlaser is presented and the results are compared with experimental data. The model provides feasibility of size reduction below λ03. The design rules are based on the Fabry-Perot formulation. Experimental demonstration of size reduction is presented using submonolayer quantum-dot-based devices. The size-depend... View full abstract»

• ### Photonic Crystal VCSELs: Detailed Comparison of Experimental and Theoretical Spectral Characteristics

Publication Year: 2013, Article Sequence Number: 1701908
Cited by:  Papers (3)
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We present a detailed comparison of experimental and simulated optical spectra obtained from a 980-nm photonic-crystal (PhC) VCSEL. We demonstrate good qualitative agreement of the experimental spectra with the calculated emitted wavelengths for number of VCSEL structures with different PhC designs. We show the statistical analysis which reveals that strong confinement introduced by the photonic c... View full abstract»

• ### A Leaky Integrate-and-Fire Laser Neuron for Ultrafast Cognitive Computing

Publication Year: 2013, Article Sequence Number: 1800212
Cited by:  Papers (49)
| | PDF (881 KB) | HTML

We propose an original design for a neuron-inspired photonic computational primitive for a large-scale, ultrafast cognitive computing platform. The laser exhibits excitability and behaves analogously to a leaky integrate-and-fire (LIF) neuron. This model is both fast and scalable, operating up to a billion times faster than a biological equivalent and is realizable in a compact, vertical-cavity su... View full abstract»

• ### Synchronized Carrier Dynamics in Quantum Dot-in-a-Well (QDWELL) Laser Under an Optical Injection

Publication Year: 2013, Article Sequence Number: 1901508
Cited by:  Papers (4)
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We used the Lüdge-Schöll (LS) model of the optically injected quantum dot (QD) in a well (QDWELL) laser and carried out the numerical simulations for the LS rate equation system. We have shown that due to the optical injection, the electron and hole dynamics in QDs is synhcronized, the modulation frequency is enhanced, and the QDWELL laser manifests a high performance at the repeti... View full abstract»

• ### Dual-State Absorber-Photocurrent Characteristics and Bistability of Two-Section Quantum-Dot Lasers

Publication Year: 2013, Article Sequence Number: 1901609
Cited by:  Papers (4)
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The peculiar behavior of the absorber photocurrent of two-section quantum-dot lasers with different gain-bandwidth chirping is studied numerically and by experiments. By biasing the absorber section of a strongly chirped laser with a self-generated positive voltage or with a reverse-bias, different emission-state lasing regimes also involving a smooth emission-state-transition from quantum-dot gro... View full abstract»

• ### Optical Emission Characteristics of Pseudopolarization-Matched Green AlInGaN/InGaN Quantum Well Structures

Publication Year: 2013, Article Sequence Number: 1901308
Cited by:  Papers (4)
| | PDF (1720 KB) | HTML

Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum... View full abstract»

• ### A Finite-Difference Time-Domain Model for Quantum-Dot Lasers and Amplifiers in the Maxwell–Schrödinger Framework

Publication Year: 2013, Article Sequence Number: 1900410
Cited by:  Papers (10)
| | PDF (897 KB) | HTML

We describe a finite-difference time-domain (FDTD) model of a long (edge-emitting) gain medium based on a quantum-dot (QD) in-a-well structure under the framework of the Maxwell-Schrödinger equations. The model includes the dynamic behavior of a QD gain medium including an excited state incorporated within carrier rate equations and considers the carrier density dependence of the refractiv... View full abstract»

• ### Model of a GaAs Quantum Dot Embedded in a Polymorph AlGaAs Nanowire

Publication Year: 2013, Article Sequence Number: 1901209
Cited by:  Papers (3)
| | PDF (1104 KB) | HTML

We report on a numerical model of quasi-1-D and quasi-0-dimensional semiconductor heterostructures. This model is strictly based on experimental structures of cylindrical nanocolumns of AlGaAs grown by molecular-beam epitaxy in the (1 1 1) direction. The nanocolumns are of 20-50 nm in diameter and 0.5-1 μm in length and contain a single GaAs quantum dot of 2 nm in thickness and 15-45 nm in ... View full abstract»

• ### Modeling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N Compositional Fluctuations

Publication Year: 2013, Article Sequence Number: 1900509
Cited by:  Papers (1)
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Compositional fluctuations of N in Ga0.68In0.32NxAs1-x result in quantum dot (QD)-like fluctuations in the conduction band edge (CBE). The influence of these compositional fluctuations on the performance of Ga 0.68In0.32 NxAs1-x /GaAs quantum well (QW) lasers has been studied using a rate equation approach. ... View full abstract»

• ### Modeling of III-Nitride Multiple-Quantum-Well Light-Emitting Structures

Publication Year: 2013, Article Sequence Number: 1901410
Cited by:  Papers (7)
| | PDF (1157 KB) | HTML

Spatial inhomogeneity of carrier injection across the multiple-quantum-well (MQW) active region of a semiconductor light emitter can impose severe limitations on the device efficiency. In III-nitride-based devices, the large disparity of electron and hole transport and the excessive depth of active QWs trigger the process of inhomogeneous QW injection which is further aggravated by strong dependen... View full abstract»

• ### Gain and Phase Recovery Dynamics in Quantum-Dot Vertical-Cavity Semiconductor Optical Amplifiers

Publication Year: 2013, Article Sequence Number: 3000207
Cited by:  Papers (6)
| | PDF (601 KB) | HTML

In this paper, we present a numerical study of gain and phase recovery dynamics in InGaAs/GaAs quantum-dot (QD)-based vertical-cavity semiconductor optical amplifier (SOA) including effects of inhomogeneous broadening and bias currents. It is shown that the effect of inhomogeneous broadening on the gain and phase recovery time is not considerable. The results reveal that the values of the phase ch... View full abstract»

• ### Power Gain Modeling of Si Quantum Dots Embedded in a SiO$_{bm x}$ Waveguide Amplifier With Inhomogeneous Broadened Spontaneous Emission

Publication Year: 2013, Article Sequence Number: 3000109
Cited by:  Papers (4)
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The small-signal power gain of Si quantum dots embedded in a Si-rich SiOx (SiOx:Si-QD)-based ridge waveguide amplifier with an inhomogeneously broadened spontaneous emission is analyzed and simulated. The small-signal power gain and the direct bandgap radiative recombination rate of SiOx:Si-QD waveguide amplifier are linked by correlating the rate equation of semic... View full abstract»

## Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Luke F. Lester
Virginia Polytechnic Institute & State University