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# IEE Proceedings - Optoelectronics

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Displaying Results 1 - 13 of 13
• ### Editorial

Publication Year: 2006, Page(s): 275
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First Page of the Article
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• ### AlGaInAs selective area growth by LP-MOVPE: experimental characterisation and predictive modelling

Publication Year: 2006, Page(s):276 - 279
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Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured experimentally. Experimental thickness profiles of InP, GaAs and GaAlAs bulk layers grown in the SAG regime have been precisely fitted with a three-dimensional vapour phase-diffusion model, and the characte... View full abstract»

• ### High-performance 1.3 /spl mu/m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

Publication Year: 2006, Page(s):280 - 283
Cited by:  Papers (1)
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A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 mum multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature ch... View full abstract»

• ### Optimum modulation frequency for FM seeded FSF laser ranging

Publication Year: 2006, Page(s):284 - 286
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A direct means for determining the optimum frequency modulation frequency for enhanced frequency-shifted feedback laser ranging is reported View full abstract»

• ### Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

Publication Year: 2006, Page(s):287 - 292
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A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, whi... View full abstract»

• ### Electronic and optical properties of dilute nitrogen quantum dots

Publication Year: 2006, Page(s):293 - 298
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A theoretical study of the electronic and optical properties of the dilute-nitrogen InGaAsN/GaAs quantum dot (QD) structures is presented. The calculations are based on a 10 band k middot p band-anti-crossing Hamiltonian incorporating valence, conduction and nitrogen-induced bands. Numerical results for the model system of capped pyramid-shaped QD with [1 0 1] facets on a thin wetting layer are pr... View full abstract»

• ### Investigation of non-equilibrium steady-state gain in semiconductor quantum wells

Publication Year: 2006, Page(s):299 - 307
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A dynamic quantum well (QW) gain model is presented, which is used to investigate non-equilibrium steady-state gain in a QW, under CW electrical and optical excitations. Intrasubband, intersubband and interband carrier-carrier and carrier-phonon scattering processes are distinguished. Carrier capture/escape is modelled as a carrier-carrier scattering process and includes the solution of Poisson's ... View full abstract»

• ### Modelling of the two-state lasing and the turn-on delay in 1.55 μm InAs/InP (113)B quantum dot lasers

Publication Year: 2006, Page(s):308 - 311
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Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the ori... View full abstract»

• ### Hybrid and passive mode-locking of a two-section laser diode in a Fourier transform external cavity

Publication Year: 2006, Page(s):312 - 315
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Passive and hybrid modelocking of a two-section laser diode in an external cavity is investigated. The cavity contains a Fourier transformation that enables spatial separation and individual manipulation of the spectral components for shaping of the pulse spectrum. We achieve 5.5 ps pulses with passive modelocking and strongly chirped 3.7 ps pulses with hybrid modelocking View full abstract»

• ### Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Publication Year: 2006, Page(s):316 - 320
Cited by:  Papers (5)
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The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 mum. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measu... View full abstract»

• ### Optimisation of high power AlGaInP laser diodes for optical storage applications

Publication Year: 2006, Page(s):321 - 325
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The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18deg. T0 is increased ... View full abstract»

• ### SAW-driven optical microcavities for device applications

Publication Year: 2006, Page(s):326 - 329
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The optical properties of microcavity (MC) polaritons parametrically driven by a surface acoustic wave (SAW) is analysed. In this case, the resonant acousto-optic nonlinearity gives rise to a very short light-acoustic wave' interaction length even for rather modest acoustic intensities. This can effectively be used for possible device applications. Two schemes SAW pumping-optical probing' are pr... View full abstract»

• ### Theoretical investigation of InGaN self-pulsating laser diodes for optical storage applications

Publication Year: 2006, Page(s):330 - 337
Cited by:  Papers (1)
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Self-pulsating laser diodes operating at 420 nm are required in high-density optical storage devices. By growing saturable absorbing quantum wells in the p-doped cladding layer, of a semiconductor laser, it is possible to obtain the interplay between gain and absorption, which is required for pulsation. The dynamics of self-pulsating InGaN laser diodes are investigated to gain an insight into how ... View full abstract»