By Topic

Application of Hybrid Power Circuits and Packages, IEE Colloquium on

Date 19 Dec 1989

Filter Results

Displaying Results 1 - 6 of 6
  • Source inductance effects on high speed switching of power MOSFETs

    Page(s): 3/1 - 3/7
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (340 KB)  

    In this paper, investigations into the effect of source inductance on the switching speed of the TO3 packaged 500 V, 12 A power MOSFET are reported. The use of the kelvin contact to increase switching speed of TO220 packaged, current sensing MOSFETs is analysed and the failure mode of such devices, when used in a high frequency inverter, investigated. Finally, the results of high speed switching tests performed on an RF packaged power MOSFET are detailed View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Some alternative substrates and techniques for high power hybrids

    Page(s): 4/1 - 4/2
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (92 KB)  

    The thermal conductivity of substrates is only one of the criteria to be considered when developing high power hybrid applications. The thermal design of assemblies is also under investigation. It has been shown that without adequate mechanical design even the highest thermal conductivity substrate provides little benefit to dissipating power from a particular device. Concepts are being developed to allow appropriate mechanical design of such packages to maximise the benefits of high thermal conductivity substrates View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • IEE Colloquium on `Application of Hybrid Power Circuits and Packages' (Digest No.157)

    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (32 KB)  

    The following topics were dealt with: customisation; monolithic circuit comparisons; MOSFETs; substrates; application-specific devices View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Hybridization or monolithic solutions?

    Page(s): 2/1 - 2/5
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (188 KB)  

    This brief article is an attempt at explaining some of the most pertinent points associated with miniaturisation. It tends to concentrate on the power integrated circuit. It is hoped that some misconceptions have also been clarified. The underlying conclusion that is inescapable, is that the choice of technology, between hybrid or monolithic silicon cannot possibly be confined to a certain set of determining factors, but that each individual application has to be judged on merit View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The solid state relay as a power hybrid

    Page(s): 5/1 - 5/4
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (164 KB)  

    The recent trend to incorporate control circuitry, or intelligence, in the same package as power semiconductor devices is not new. The Solid State Relay has been using this combination for many years and its present day technology and construction reflect this maturity. There is much to be learnt by examining the evolution of technology and manufacturing represented by the Solid State Relay (SSR). This has further been applied to various custom designs for specific customers termed ASPODs, for Application Specific Power Devices View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Customised modules-an economic approach

    Page(s): 1/1 - 1/3
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (136 KB)  

    Isolated power semiconductor modules are a familiar part of current system design and manufacture. Historically, customer specific designs have been limited to hybrid technology with relatively low power ratings. Above a few tens of amps modules have been available offering either individual devices or simple circuit functions such as half or full bridges. In general these power modules have been characterised by having a thick copper base for mounting purposes upon which has been fixed an insulator to carry the various semiconductor chips. With the increasing availability of direct copper bonded substrates a new generation of modules has become possible View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.