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Microelectronics, 2006 25th International Conference on

Date 14-17 May 2006

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Displaying Results 1 - 25 of 177
  • 2006 25th International Conference on Microelectronics

    Page(s): i
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  • Call for papers

    Page(s): ii
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  • [Title page]

    Page(s): iii
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  • [Copyright notice]

    Page(s): iv
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  • Program Committee

    Page(s): v - vi
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  • Table of contents

    Page(s): vii - xix
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  • MIEL 2004 Best Paper Award Winners

    Page(s): xx - xxiv
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  • Workshop Nanotechnologies [breaker page]

    Page(s): 1
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  • Semiconductor Manufacturing in the Nanotechnology World of the 21st Century

    Page(s): 2 - 8
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (467 KB) |  | HTML iconHTML  

    The term nanotechnology has different meanings and expectations to different people. In this paper, we have defined and examined what really is nanotechnology. Based on the use of fundamental knowledge of science and system level engineering and business knowledge that we know as of today, the role of nanotechnology in the semiconductor manufacturing in the 21st century is described. As of today, there is no other technology that can replace silicon CMOS based integrated circuits as the feedstock of electronics industry. Key trends in semiconductor manufacturing are predicted that will drive the growth of global electronics industry View full abstract»

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  • Nanoscience and Nanotechnologies in Serbia

    Page(s): 9 - 14
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    The paper shows that the large interest researchers throughout the world for the multidisciplinary fields of nanoscience and nanotechnologies reflected very fruitfully in the science in Serbia. The paper presents some topics of nanoscience and nanotechnology researched in Serbia, outlines the organization of research in this field of global importance and mentions some of the problems encountered along the way. A personal view to some of the current matters is also given. In spite of financial difficulties, Serbian science has shown that it is able to take part in one of the most propulsive and attractive fields of science View full abstract»

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  • Failure of Ohm's Law: Its Implications on the Design of Nanoelectronic Devices and Circuits

    Page(s): 15 - 22
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (660 KB) |  | HTML iconHTML  

    Impact of Ohm's law failure on the design of twenty-first-century nanocircuits is evaluated and discussed. The direct and differential resistance is shown to rise dramatically in the nonohmic regime, where applied voltage V Gt Vc, the critical voltage for the onset of nonohmic behavior. The velocity-field characteristics that affect transport in quantum nanostructures are reviewed. The impact on the familiar current and voltage division laws and CMOS design is indicated. The results presented are useful in characterizing and evaluating performance of nanodevices and related circuits View full abstract»

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  • Device Integration Issues Towards 10 nm MOSFETs

    Page(s): 23 - 28
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    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high kappa gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO2/Al2O3. Low frequency noise properties for those devices are also analyzed. A selective SiGe epitaxy process for low resistivity source/drain contacts has been developed and implemented in pMOSFETs. A spacer pattering technology using optical lithography to fabricate sub 50 nm high-frequency MOSFETs and nanowires is demonstrated. Finally ultra thin body SOI devices with high mobility SiGe channels are demonstrated View full abstract»

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  • Nanoscale Materials, Devices, and Systems for Sensing, Detection, and Environmental Pollution Monitoring and Mitigation

    Page(s): 29 - 36
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1651 KB) |  | HTML iconHTML  

    The objective of this investigation is to utilize nanoscale materials, devices, and systems as in-situ sensors and detectors of chemical and biological agents coupled with remote satellite image processed data for environmental air pollution monitoring. The efficacy of nanoparticles based environmental sensing using commercially available nanoscale metal-oxide based gas detectors is augmented by image processed satellite data to monitor local and regional air pollution dispersion. To extend our research to other forms of pollution, we present preliminary investigations of nanotechnology based sensors towards mitigating air and water based contaminants. Similar extensions of preliminary research results towards the detection of food and air-borne pathogens using nanoparticles based diagnostic tools are also presented View full abstract»

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  • The Role of Non-Equilibrium Plasmas and MicroDischarges in Top Down Nanotechnologies and Selforganized Assembly of Nanostructures

    Page(s): 37 - 44
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    We have reviewed the role of plasma technologies in future development of nanoelectronics and in the development of other nanotechnologies. First we address the problems in application of the standard plasma etching procedure. We proceed to discuss the development of damage free plasma processes, in particular the etching by fast neutral beams. Fast neutral beams have a potential for implementation beyond the standard application in production of integrated circuits (ICs). In the second half of the paper, we discuss some of the applications of micro discharges. The dc volte ampere characteristics should be analyzed in order to reveal the predominant physical processes by studying E/N, pd and jd2 scaling. We also give some results related to rf microdischarge operating at atmospheric pressure also known as plasma needle. It gives rise to new possibilities for medical treatments (including surgery) with minimum tissue damage. Finally we briefly describe other emerging applications of plasmas in nanotechnologies View full abstract»

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  • Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

    Page(s): 45 - 52
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    The present status, successes, challenges and future of Ta2 O5, and mixed Ta2O5-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta2O5-based dielectrics (doped Ta2O5 and multicomponent high-k dielectrics) as well as of metal/high-k interface in MIM capacitor configuration are identified as critical factors for further reduction of EOT value below 1 nm View full abstract»

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  • Electrically Active Defects at the Interface between

    Page(s): 53 - 58
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    The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550degC View full abstract»

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  • Capacitance Behavior of Nanometer FD SOI CMOS Devices with HfO2 High-K Gate Dielectric Considering Gate Tunneling Leakage Current

    Page(s): 59 - 61
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (852 KB) |  | HTML iconHTML  

    This paper reports the CSG/CDG capacitance behavior of 100 nm fully-depleted (FD) SOI CMOS devices with HfO2 high-k gate dielectric considering gate tunneling leakage current. According to the 2D simulation results, a unique two-step CSG/CDG versus VG curve exists for the device with the 1.5 nm HfO2 gate dielectric due to the vertical displacement effect. Gate tunneling leakage current has a more impact on CDG as compared to CSG View full abstract»

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  • Plenary Sessions [breaker page]

    Page(s): 62
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  • Defect Engineering and Stress Control in Advanced Devices on High-Mobility Substrates

    Page(s): 63 - 72
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    The downscaling of CMOS below 45 nm has triggered the use of high-mobility substrates in order to compensate the mobility degradation related to the implementation of high-k dielectrics. Strain engineering has become a very popular technique to boost up the mobility and drive current. This paper discusses the electrical performance of junctions and transistors processed in strained Si on thin (250-350 nm) strain relaxed SiGe buffer (SRB) layers. The impact of the substrate (misfit and threading dislocation density, use of a C-rich layer in the SiGe buffer, global or locally epitaxial layer) and processing parameters (anneal conditions and doping type) on a variety of performance parameters such as transconductance, mobility, diode leakage current, minority carrier lifetime and low frequency noise are investigated. Some physical models are proposed to explain the experimental observations. Finally, the potential and issues with alternative high-mobility substrates will be briefly highlighted View full abstract»

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  • Reviews and Prospects of Low-Voltage Nano-Scale Embedded RAMs

    Page(s): 73 - 77
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    Low-voltage nanoscale embedded RAMs are described, focusing on RAM cells and peripheral circuits. First, challenges and trends of low-voltage RAM cells are discussed in terms of signal charge, signal voltage, and noise. ECC to cope with the ever-increasing soft-error rate, power-supply controls to widen the voltage margin of cells, and a fully-depleted SOI to reduce VT-variation are also investigated. Then peripheral circuits are explained in terms of leakage reduction and compensation for speed variations. Based on this, it is concluded that low-voltage RAMs cannot be achieved without reducing speed variations caused by variations in VT, thus resulting in a further need for compensation circuits and new devices with reduced VT variation View full abstract»

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  • Gate Oxide Reliability for Nano-Scale CMOS

    Page(s): 78 - 83
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (515 KB) |  | HTML iconHTML  

    The reliability of the gate oxide in microelectronics, i.e., the ability of a thin film of this material to retain its excellent dielectric properties while subjected to high electric fields, has been a perennial concern over the last 40-45 years. Two dominant gate oxide failure mechanisms, dielectric breakdown and the negative bias instability, have continued to cause concern as MOSFET devices have scaled to nanometer dimensions View full abstract»

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  • Effects of Device Aging on Microelectronics Radiation Response and Reliability

    Page(s): 84 - 91
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    Recent work is reviewed that shows that MOS and bipolar device radiation response can change significantly with aging time after device fabrication and/or packaging. Effects include changes in radiation response due to burn-in, pre-irradiation elevated temperature stress, and/or long-term storage. These changes are attributed experimentally and theoretically to the motion and reactions of water and other hydrogen-related species. Similar hydrogen-related reactions can also affect the long-term reliability of MOS devices and integrated circuits, as illustrated in detail here for negative-bias temperature instability View full abstract»

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  • Session Nanotechnologies [breaker page]

    Page(s): 92
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  • Nonlinear Model of Microtubule Dynamics and Its Impact on Kinesin Motion

    Page(s): 93 - 96
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    In this paper, we elaborate the nonlinear model based on ferroelectric properties of microtubules (MTs) and triggered by hydrolysis of GTP (guanosine triphosphate) followed by conversion of chemical energy into large conformational rotation of corresponding tubulin dimer. We attempted to elucidate some functional properties of microtubules pertaining kinesin motor protein on the basis of this elegant model View full abstract»

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  • Adsorbed Mass Fluctuations of a Micro/Nanoresonator Surrounded by an Arbitrary Gas Mixture

    Page(s): 97 - 100
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    Micro/nanoresonator mass and frequency fluctuations caused by sorption processes on a resonator surface are investigated. Arbitrary gas mixture is considered, assuming that particle arrivals at the surface are all poissonian in nature, independent from each other, and that sorption dynamics follows the Langmuir isotherm. Power spectral density for mass fluctuations are derived using the analytical Langevin approach. The results of simulations are given for a silicon micro/nanocantilever in the atmosphere of four gases. The presented analysis is useful for calculation of the ultimate performance of MEMS/NEMS sensors and oscillators, as well as for investigation of the possibilities of their parameters optimization by choosing the gas mixture in the cantilever's atmosphere. Another objective is to consider the possibility of identification of gases in the mixture, based on the power spectral density of the adsorbed mass fluctuation View full abstract»

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