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2006 25th International Conference on Microelectronics

Date 14-17 May 2006

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  • 2006 25th International Conference on Microelectronics

    Publication Year: 2006, Page(s): i
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  • Call for papers

    Publication Year: 2006, Page(s): ii
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  • [Title page]

    Publication Year: 2006, Page(s): iii
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  • [Copyright notice]

    Publication Year: 2006, Page(s): iv
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  • Program Committee

    Publication Year: 2006, Page(s):v - vi
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  • Table of contents

    Publication Year: 2006, Page(s):vii - xix
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  • MIEL 2004 Best Paper Award Winners

    Publication Year: 2006, Page(s):xx - xxiv
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  • Workshop Nanotechnologies [breaker page]

    Publication Year: 2006, Page(s): 1
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  • Semiconductor Manufacturing in the Nanotechnology World of the 21st Century

    Publication Year: 2006, Page(s):2 - 8
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (467 KB) | HTML iconHTML

    The term nanotechnology has different meanings and expectations to different people. In this paper, we have defined and examined what really is nanotechnology. Based on the use of fundamental knowledge of science and system level engineering and business knowledge that we know as of today, the role of nanotechnology in the semiconductor manufacturing in the 21st century is described. As of today, ... View full abstract»

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  • Nanoscience and Nanotechnologies in Serbia

    Publication Year: 2006, Page(s):9 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (800 KB) | HTML iconHTML

    The paper shows that the large interest researchers throughout the world for the multidisciplinary fields of nanoscience and nanotechnologies reflected very fruitfully in the science in Serbia. The paper presents some topics of nanoscience and nanotechnology researched in Serbia, outlines the organization of research in this field of global importance and mentions some of the problems encountered ... View full abstract»

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  • Failure of Ohm's Law: Its Implications on the Design of Nanoelectronic Devices and Circuits

    Publication Year: 2006, Page(s):15 - 22
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (660 KB) | HTML iconHTML

    Impact of Ohm's law failure on the design of twenty-first-century nanocircuits is evaluated and discussed. The direct and differential resistance is shown to rise dramatically in the nonohmic regime, where applied voltage V Gt Vc, the critical voltage for the onset of nonohmic behavior. The velocity-field characteristics that affect transport in quantum nanostructures are reviewed. The ... View full abstract»

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  • Device Integration Issues Towards 10 nm MOSFETs

    Publication Year: 2006, Page(s):23 - 28
    Cited by:  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1318 KB) | HTML iconHTML

    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high kappa gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO2/Al2O3. L... View full abstract»

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  • Nanoscale Materials, Devices, and Systems for Sensing, Detection, and Environmental Pollution Monitoring and Mitigation

    Publication Year: 2006, Page(s):29 - 36
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1651 KB) | HTML iconHTML

    The objective of this investigation is to utilize nanoscale materials, devices, and systems as in-situ sensors and detectors of chemical and biological agents coupled with remote satellite image processed data for environmental air pollution monitoring. The efficacy of nanoparticles based environmental sensing using commercially available nanoscale metal-oxide based gas detectors is augmented by i... View full abstract»

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  • The Role of Non-Equilibrium Plasmas and MicroDischarges in Top Down Nanotechnologies and Selforganized Assembly of Nanostructures

    Publication Year: 2006, Page(s):37 - 44
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (510 KB) | HTML iconHTML

    We have reviewed the role of plasma technologies in future development of nanoelectronics and in the development of other nanotechnologies. First we address the problems in application of the standard plasma etching procedure. We proceed to discuss the development of damage free plasma processes, in particular the etching by fast neutral beams. Fast neutral beams have a potential for implementatio... View full abstract»

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  • Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

    Publication Year: 2006, Page(s):45 - 52
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (810 KB) | HTML iconHTML

    The present status, successes, challenges and future of Ta2 O5, and mixed Ta2O5-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta2O5-based dielectrics (doped Ta2O5 and multicomponent high-k dielectrics) as well as of metal/high-k interface ... View full abstract»

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  • Electrically Active Defects at the Interface between

    Publication Year: 2006, Page(s):53 - 58
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    The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hyd... View full abstract»

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  • Capacitance Behavior of Nanometer FD SOI CMOS Devices with HfO2 High-K Gate Dielectric Considering Gate Tunneling Leakage Current

    Publication Year: 2006, Page(s):59 - 61
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (852 KB) | HTML iconHTML

    This paper reports the CSG/CDG capacitance behavior of 100 nm fully-depleted (FD) SOI CMOS devices with HfO2 high-k gate dielectric considering gate tunneling leakage current. According to the 2D simulation results, a unique two-step CSG/CDG versus VG curve exists for the device with the 1.5 nm HfO2 gate dielectric due t... View full abstract»

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  • Plenary Sessions [breaker page]

    Publication Year: 2006, Page(s): 62
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  • Defect Engineering and Stress Control in Advanced Devices on High-Mobility Substrates

    Publication Year: 2006, Page(s):63 - 72
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (944 KB) | HTML iconHTML

    The downscaling of CMOS below 45 nm has triggered the use of high-mobility substrates in order to compensate the mobility degradation related to the implementation of high-k dielectrics. Strain engineering has become a very popular technique to boost up the mobility and drive current. This paper discusses the electrical performance of junctions and transistors processed in strained Si on thin (250... View full abstract»

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  • Reviews and Prospects of Low-Voltage Nano-Scale Embedded RAMs

    Publication Year: 2006, Page(s):73 - 77
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1782 KB) | HTML iconHTML

    Low-voltage nanoscale embedded RAMs are described, focusing on RAM cells and peripheral circuits. First, challenges and trends of low-voltage RAM cells are discussed in terms of signal charge, signal voltage, and noise. ECC to cope with the ever-increasing soft-error rate, power-supply controls to widen the voltage margin of cells, and a fully-depleted SOI to reduce VT-variation are als... View full abstract»

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  • Gate Oxide Reliability for Nano-Scale CMOS

    Publication Year: 2006, Page(s):78 - 83
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (515 KB) | HTML iconHTML

    The reliability of the gate oxide in microelectronics, i.e., the ability of a thin film of this material to retain its excellent dielectric properties while subjected to high electric fields, has been a perennial concern over the last 40-45 years. Two dominant gate oxide failure mechanisms, dielectric breakdown and the negative bias instability, have continued to cause concern as MOSFET devices ha... View full abstract»

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  • Effects of Device Aging on Microelectronics Radiation Response and Reliability

    Publication Year: 2006, Page(s):84 - 91
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (682 KB) | HTML iconHTML

    Recent work is reviewed that shows that MOS and bipolar device radiation response can change significantly with aging time after device fabrication and/or packaging. Effects include changes in radiation response due to burn-in, pre-irradiation elevated temperature stress, and/or long-term storage. These changes are attributed experimentally and theoretically to the motion and reactions of water an... View full abstract»

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  • Session Nanotechnologies [breaker page]

    Publication Year: 2006, Page(s): 92
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  • Nonlinear Model of Microtubule Dynamics and Its Impact on Kinesin Motion

    Publication Year: 2006, Page(s):93 - 96
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    In this paper, we elaborate the nonlinear model based on ferroelectric properties of microtubules (MTs) and triggered by hydrolysis of GTP (guanosine triphosphate) followed by conversion of chemical energy into large conformational rotation of corresponding tubulin dimer. We attempted to elucidate some functional properties of microtubules pertaining kinesin motor protein on the basis of this eleg... View full abstract»

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  • Adsorbed Mass Fluctuations of a Micro/Nanoresonator Surrounded by an Arbitrary Gas Mixture

    Publication Year: 2006, Page(s):97 - 100
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    Micro/nanoresonator mass and frequency fluctuations caused by sorption processes on a resonator surface are investigated. Arbitrary gas mixture is considered, assuming that particle arrivals at the surface are all poissonian in nature, independent from each other, and that sorption dynamics follows the Langmuir isotherm. Power spectral density for mass fluctuations are derived using the analytical... View full abstract»

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