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Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

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Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Date 5-8 Dec. 1993

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Title History

High-performance microwave power AlInAs/GaInAs/InP double heterojunction bipolar transistors with compositionally graded base-collector junction

A f/sub T/=175 GHz carbon-doped base InP/InGaAs HBT

High f/sub max/ InAlAs/InGaAs heterojunction bipolar transistors

An effective secondary electron emission suppression treatment for copper MDC electrodes

A model of secondary emission for use in computer simulation of vacuum electronic devices

Microminiature thermionic vacuum tube diodes

Electrical and thermal modeling of a gated field emission triode

Observation of emission from silicon field-emission arrays with focusing

Deflection microwave amplifier with field emission arrays

Field emission arrays for microwave applications

Progress in field-emitter array development for high-frequency operation

A new study of the junction leakage current due to 45/spl deg/-off active pattern after LOCOS process

Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

ULSI-quality gate oxide on thin-film-silicon-on-insulator

Latch-up performance of a sub-0.5 micron inter-well deep trench technology

Symmetric CMOS in fully-depleted silicon-on-insulator using P/sup +/-polycrystalline SiGe gate electrodes

Optimization of series resistance in sub-0.2 /spl mu/m SOI MOSFETs

A physical model including velocity overshoot for drain current of sub-0.15 /spl mu/m MOSFET's

Oxide-charge generation during hot-carrier degradation of PMOSTs

Impact of drain profiles on Ti-salicided pMOSFET characteristics analyzed by a first comprehensive coupled process/device simulator for salicided MOSFETs

Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 /spl mu/m MOSFET's

ULSI technology development by predictive simulations

High voltage, temperature-hard 3C-SiC Schottky diodes using all-Ni metallization

Low contact resistivity ohmic contacts to 6H-silicon carbide

200/spl deg/C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 /spl mu/m thick SOI

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