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European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005

Date 3-4 Oct. 2005

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  • The European Gallium Arsenide and Other Compound Semiconductors Application Symposium 2005

    Publication Year: 2005, Page(s): 0_1
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  • European Microwave Week 2005, 3-7 October 2005, CNIT la Defense, Paris, France - Book of Abstracts

    Publication Year: 2005
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4231 KB)

    Presents abstracts of the papers from the 2005 European Microwave Week conferences (3-7 October 2005), CNIT la Defense, Paris, France. View full abstract»

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  • [Title page]

    Publication Year: 2005, Page(s): i
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  • [Copyright notice]

    Publication Year: 2005, Page(s): ii
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  • Welcome from the chairman of GAAS® 2005

    Publication Year: 2005, Page(s): iii
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  • Welcome from the GAAS® Association President

    Publication Year: 2005, Page(s): iv
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  • List Conference Committees

    Publication Year: 2005, Page(s): v
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  • GAAS® 2005 Technical Reviewers

    Publication Year: 2005, Page(s): vi
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  • GAAS® 2004 Best Paper Award

    Publication Year: 2005, Page(s): vii
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  • GAAS® 2004 Graduate Research Fellowships

    Publication Year: 2005, Page(s): viii
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  • GAAS® 2005 Sessions

    Publication Year: 2005, Page(s): ix
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  • [Blank page]

    Publication Year: 2005, Page(s): x
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  • [Table of Contents]

    Publication Year: 2005, Page(s):xi - xxi
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  • [Blank page]

    Publication Year: 2005, Page(s): xxii
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  • Author index

    Publication Year: 2005, Page(s):xxiii - xxv
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  • [Blank page]

    Publication Year: 2005, Page(s): xxvi
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  • Carbon nanotubes for RF and microwaves

    Publication Year: 2005, Page(s):1 - 4
    Cited by:  Papers (1)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (341 KB) | HTML iconHTML

    In this invited overview we provide a brief up-to-date summary of the potential applications of carbon nanotubes for RF and microwave devices and systems. We focus in particular on the use of nanotubes as ultra-high speed interconnects in integrated circuits. View full abstract»

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  • An overview of microwave component requirements for future space applications

    Publication Year: 2005, Page(s):5 - 12
    Cited by:  Patents (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (622 KB) | HTML iconHTML

    New and emerging microwave component developments and their potential impact upon payload implementation for future European Space Agency (ESA) missions are discussed. Consideration is given to the use of indium antimonide (InSb), gallium nitride (GaN), RF CMOS along with MEMS and advanced packaging techniques. View full abstract»

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  • Are we there yet? - a metamorphic HEMT and HBT perspective

    Publication Year: 2005, Page(s):13 - 19
    Cited by:  Papers (3)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (309 KB) | HTML iconHTML

    Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper presents the recent development of metamorphic HEMTs and HBTs and discusses their readiness for commercialization. View full abstract»

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  • Status of AlGaN/GaN HEMT technology - a UCSB perspective

    Publication Year: 2005, Page(s):21 - 27
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (353 KB) | HTML iconHTML

    The following major technological advances (i) the ability to grow high quality materials on sapphire and SiC, (ii) the advent of SiN passivation to eliminate current slump or dispersion, (iii) advanced processing, and (iv) implementation of field plates have taken AlGaN/GaN HEMTs to commercialization in the relatively short time of approximately a decade. In this paper, we present the highlights ... View full abstract»

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  • Enabling RFCMOS solutions for emerging advanced applications

    Publication Year: 2005, Page(s):29 - 35
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1063 KB) | HTML iconHTML

    The enablement of advanced RF applications with CMOS is discussed. This is accomplished through a broad menu of low-cost and high-performance modular technology features with accompanying scalable devices models which are accurate to frequencies well above application conditions. View full abstract»

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  • A cost-effective 10 Watt X-band high power amplifier and 1 Watt driver amplifier chip-set

    Publication Year: 2005, Page(s):37 - 40
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (200 KB) | HTML iconHTML

    An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which has an output power of 10 Watt over the 8.5 - 10.5 GHz frequency band and a driver amplifier with an output power of more than 1 Watt over the 8.5 - 11.5 GHz frequency band. The amplifiers have been developed in the 6... View full abstract»

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  • Compact and broadband microstrip power amplifier MMIC with 400-mW output power using 0.15-/spl mu/m GaAs PHEMTs

    Publication Year: 2005, Page(s):41 - 44
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (541 KB) | HTML iconHTML

    The performance of a compact power amplifier MMIC for 35 to 45 GHz applications is reported. Using a standard 6-inch, 0.15-/spl mu/m GaAs power PHEMT technology on 100-/spl mu/m substrate thickness, in combination with appropriate compact circuit topologies, this microstrip power amplifier achieved a linear gain of more than 24 dB over the 36 to 45 GHz frequency range. At 5 V and 500 mA bias, an o... View full abstract»

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  • A high-efficiency HBT-based class-E power amplifier for 2 GHz

    Publication Year: 2005, Page(s):45 - 48
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (296 KB) | HTML iconHTML

    A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit contains the standard 50-ohm input and o... View full abstract»

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  • A 3.2 W coplanar single-device X-band amplifier with GaAs HBT

    Publication Year: 2005, Page(s):49 - 52
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (244 KB) | HTML iconHTML

    High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved. View full abstract»

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