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Semiconductor Device Research Symposium, 2005 International

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Semiconductor Device Research Symposium, 2005 International

Date Dec. 7-9, 2005

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Title History

Aldert vander Ziel award

Author Index

ISDRS'05 Committees

Technical session schedule

An efficient THz source with a tuning range of 71.1-2830 /spl mu/m (0.106-4.22 THz) based on frequency mixing in a GaP crystal

CMOS&post CMOS on-chip microwave pulse power detectors

Degradation of Characteristics and Critical Bit-Flip Errors in Cascaded 3-Stage CMOS Inverters due to RF Interference

Study of Dual-Gate SOI MOSFETs as RF Mixers

Growth, fabrication and characterization of In_0.52Al_0.48As/In_0.53Ga_0.47As/InAs_0.3P_0.7 composite channel HEMTs

The Temperature Dependence in the Subthreshold Regime of Fully Depleted Double-Gate FinFETs

Scaling Rules for Tunnel Field-Effect Transistors

Layout and Geometry Tolerances in COSMOS

A Novel High Performance Integrated Phototransistor Photodetector (PTPD) In Standard SiGe BiCMOS Technology

An experimental 4RTD logic gate

A CMOS Compatible Single Polysilicon Embedded NVM

Real-time detection of single-electron tunneling current

Magnetic Logic Devices Based on Field-Coupled Nanomagnets

Electrical and structural characterization of GaN nanowire based devices

Performance Enhancement of ZnO Nanowire Field-effect Transistors with Self-Assembled Organic Nanodielectrics

A new approach for fabricating horizontally grown semiconductor nanowires (case of zinc oxide)

Electrical Conduction in Metallic Nanotubes

An Accurate Model of the C-V Characteristic due to Quantum Mechanical Effects for the Surrounding Gate Transistor

A Fully 2-dimensional Poisson-Schrodinger modeling of the HEMT: Effects of short gate lengths

I-V Characteristics Modeling and Parameter Extraction for CNT-FETs

Full 3D Process and Device Simulation for FinFET optimization

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