By Topic

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.

4-6 Aug. 2004

Filter Results

Displaying Results 1 - 25 of 57
  • Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices

    Publication Year: 2004, Page(s): 0_1
    Request permission for commercial reuse | PDF file iconPDF (639 KB)
    Freely Available from IEEE
  • High performance devices

    Publication Year: 2004, Page(s): i
    Request permission for commercial reuse | PDF file iconPDF (19 KB)
    Freely Available from IEEE
  • Selected topics in electronics and systems

    Publication Year: 2004, Page(s): ii
    Request permission for commercial reuse | PDF file iconPDF (84 KB)
    Freely Available from IEEE
  • High Performance Devices. Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices (IEEE Cat. No. 04CH37587)

    Publication Year: 2004
    Request permission for commercial reuse | PDF file iconPDF (34 KB)
    Freely Available from IEEE
  • Copyright page

    Publication Year: 2004, Page(s): iv
    Request permission for commercial reuse | PDF file iconPDF (54 KB)
    Freely Available from IEEE
  • Preface

    Publication Year: 2004, Page(s):v - vi
    Request permission for commercial reuse | PDF file iconPDF (204 KB) | HTML iconHTML
    Freely Available from IEEE
  • 2004 IEEE Lester Eastman Conference on High Performance Devices

    Publication Year: 2004, Page(s):vii - viii
    Request permission for commercial reuse | PDF file iconPDF (94 KB)
    Freely Available from IEEE
  • 2004 IEEE Lester Eastman Conference on High Performance Devices

    Publication Year: 2004, Page(s):ix - xii
    Request permission for commercial reuse | PDF file iconPDF (241 KB)
    Freely Available from IEEE
  • Table of contents

    Publication Year: 2004, Page(s):xiii - xvii
    Request permission for commercial reuse | PDF file iconPDF (302 KB)
    Freely Available from IEEE
  • Vertical scaling of type I InP HBT with fT > 500 GHz

    Publication Year: 2004, Page(s):1 - 7
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1325 KB) | HTML iconHTML

    We have fabricated the high-speed InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) with current gain cutoff frequency, fT from 166GHz to over 500GHz by the approach of vertical scaling. Collector thickness is reduced from 3000Å to 750Å and the peak current density is increased up to 1300kA/cm2. In this paper, device RF performance has been compar... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs

    Publication Year: 2004, Page(s):8 - 15
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2072 KB) | HTML iconHTML

    Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased ft and fmax; decreasing of the collector doping concentration and shrinking the collector thickne... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Tunnel diode/transistor differential comparator

    Publication Year: 2004, Page(s):16 - 21
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1200 KB) | HTML iconHTML

    A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaA... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Benchmark results for high-speed 4-bit accumulators implemented in indium phosphide DHBT technology

    Publication Year: 2004, Page(s):22 - 27
    Cited by:  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (467 KB) | HTML iconHTML

    High-speed accumulators are frequently used as a benchmark of the high-speed performance and ability to yield large scale circuits in InP double heterojunction bipolar (DHBT) processes. In previous work, we reported test results of an InP DHBT 4-bit accumulator with 624 transistors operating at 41 GHz clock frequency with a power consumption of 4.1W. In this work, we report on modifications that a... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Atomically flat III-antimonide epilayers grown using liquid phase epitaxy

    Publication Year: 2004, Page(s):28 - 33
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1652 KB) | HTML iconHTML

    A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using liquid phase epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 μm) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5&conin... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Native defect compensation in III-antimonide bulk substrates

    Publication Year: 2004, Page(s):34 - 39
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (691 KB) | HTML iconHTML

    As-grown, undoped III-antimonide bulk substrates contain high concentration of native defects resulting in high residual carrier density. In this paper, we have demonstrated that native defects can be compensated in bulk substrates of GaSb, InSb, and Ga1-xInxSb via impurity doping and low temperature growth from nonstoichiometric melts and solutions. Decrease in residual carr... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Noise and THz rectification characteristics of zero-bias quantum tunneling Sb-heterostructure diodes

    Publication Year: 2004, Page(s):40 - 45
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1292 KB) | HTML iconHTML

    The Sb-heterostructure quantum tunneling diode, fabricated from epitaxial layers of InAs and AlGaSb, is a recently proposed device for direct detection and mixing in the submillimeter wavelength range. These diodes exhibit especially high curvature in the current-voltage characteristic that produces the rectification or mixing without bias. Operation without bias is a highly desirable feature as t... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Temperature dependence of terahertz emission from silicon devices doped with boron

    Publication Year: 2004, Page(s):46 - 51
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (587 KB) | HTML iconHTML

    In this paper, we report on electrically pumped terahertz emitters based on silicon doped with boron acceptors. At cryogenic temperatures, three narrow spectral emission lines attributed to radiative transitions from p-like excited hydrogenic states to the s-like Γ8 ground state associated with the boron dopants were observed centered around 8 THz. The spectral emission line cente... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Two-dimensional analytical modeling and simulation of retrograde doped HMG MOSFET

    Publication Year: 2004, Page(s):52 - 59
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1566 KB) | HTML iconHTML

    A novel device architecture, retrograde doped HMG (hetero-material gate) MOSFET is presented which combines the advantages of an epitaxial layer in the channel region with the HMG MOSFET. This combination tackles the problems of short channel effects (SCEs), hot electron effects and gate transport efficiency in a single structure by reducing threshold voltage and modifying the electric field patte... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrical effects of DNA molecules on silicon field effect transistor

    Publication Year: 2004, Page(s):60 - 65
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (710 KB) | HTML iconHTML

    Much research has been devoted to the field of DNA detection for biotechnology and medical diagnostics. Conventionally, this has involved lab-scale large instruments such as fluorescent microscope, with DNA binding and tagging. Recently, however, the possibility of label-free, rapid, sensitive and miniaturized DNA detection electronically has attracted increasing interest in the field. To investig... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis of operational transconductance amplifier for application in GHz frequency range

    Publication Year: 2004, Page(s):66 - 71
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (398 KB) | HTML iconHTML

    Operational transconductance amplifier (OTA) is an excellent current mode device suited very well for VLSI implementation. In this contribution we report realization of OTA using silicon-on-insulator (SOI) structure based MOSFETs and compared them to OTA designed with bulk MOSFET. SOI based OTA outperformed bulk MOSFET OTA giving close to 10 GHz improvement in high frequency fT. A band-... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Lifetime of nonequilibrium carriers in AlGaN epilayers with high Al molar fraction

    Publication Year: 2004, Page(s):72 - 77
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB) | HTML iconHTML

    AlGaN epilayers with different aluminum content have been studied by photoluminescence (PL) and light-induced transient grating (LITG) techniques. The epilayers were grown by conventional metal organic chemical vapor deposition (MOCVD) and by migration enhanced MOCVD (MEMOCVDTM). The carrier lifetime and PL intensity in epilayers containing the same amount of aluminum are shown to be inversely pro... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes

    Publication Year: 2004, Page(s):78 - 83
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (670 KB) | HTML iconHTML

    Low frequency fluctuations in light intensity of 340 nm and 280 nm GaN-based light emitting diodes (LEDs) are compared with noise properties of other commercially available UV and visible wavelength LEDs and halogen lamps. At low frequencies, LEDs can exhibit lower levels of noise than halogen lamps. An LED noise quality factor beta is estimated for the UV LEDs View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Junction-temperature measurements in GaN UV light-emitting diodes using the diode forward voltage

    Publication Year: 2004, Page(s):84 - 89
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (594 KB) | HTML iconHTML

    A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (T) is developed. A new expression for dVf/dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the bandgap energy, and the effective density of states. Experimental res... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

    Publication Year: 2004, Page(s):90 - 95
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1202 KB) | HTML iconHTML

    Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Self-guiding in low-index-contrast planar photonic crystals

    Publication Year: 2004, Page(s):96 - 101
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1587 KB) | HTML iconHTML

    This paper presents a new lateral confinement mechanism based on the self-collimation effect in planar photonic crystals (PhCs). In this mechanism, planar PhCs with approximately flat equifrequency contours (EFCs) are utilized for laterally confining the light and total internal reflection (TIR) is used for the vertical confinement. Since this mechanism relies on dispersion engineering, no photoni... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.