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Radiation Effects Data Workshop, 2005. IEEE

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Radiation Effects Data Workshop, 2005. IEEE

Date 11-15 July 2005

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Title History

Single event effects test and analysis results from the Boeing Radiation Effects Laboratory (BREL)

The effects of device metal interconnect overlayers on SEE testing

Single event upset characterization of the SMJ320C6701 digital signal processor using proton irradiation

Radiation belt modeling for spacecraft design: model comparisons for common orbits

Recent single event effects results for candidate spacecraft electronics for NASA

Total dose degradation of low-dropout voltage regulators

Supervisory circuits in a mixed neutron and gamma radiation environment

COTS ADC & DAC selection and qualification for the GLAST mission

Total ionizing dose gamma and proton radiation testing on a COTS interline CCD with microlens

Single event upset characterization of the ESP603 single board space computer with the PowerPC603r processor using proton irradiation

Dynamic single event upset characterization of the Virtex-IIPro's embedded IBM PowerPC405 using proton irradiation

Total ionizing dose effects in bipolar and BiCMOS devices

Rockwell H1RG silicon PIN diode array gamma and proton radiation characterization at cryo temperatures

The impact of substrate bias on proton damage in 130 nm CMOS technology

The ionizing radiation environment on the International Space Station: performance vs. expectations for avionics and materials

Validation and testing of design hardening for single event effects using the 8051 microcontroller

Single event transients in operational amplifiers

Recent total ionizing dose results and displacement damage results for candidate spacecraft electronics for NASA

Total ionizing dose effects on the analog performance of a 0.13 μm CMOS technology

Radiation hardness evaluation of a class V 32-bit floating-point digital signal processor

Radiation effects on XFET voltage references

Part II. Dynamic single event upset characterization of the Virtex-II field programmable gate array using proton irradiation

Test results of single-event effects conducted by the Jet Propulsion Laboratory

Single event effects testing of a PLL and LVDS in a RadHard-by-design 0.25-micron ASIC

Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices

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