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Simulation of quantum wells with `spikes' and `dips'

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This paper appears in:
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Date of Conference: 24-28 Sept. 2007
Author(s): Laakso, A.
Tampere Univ. of Technol., Tampere
Dumitrescu, M. ;  Toikkanen, L. ;  Tukiainen, A. ;  Rimpilainen, V. ;  Pessa, M.
Page(s): 47 - 48
Product Type: Conference Publications

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Abstract

The use of thin high-bandgap 'spikes' or thin low-bandgap 'dips' inside conventional rectangular quantum wells gives supplementary flexibility in engineering intra- and inter-band energy level separation. The paper presents simulation and experimental studies of the effects of 'spikes' and 'dips' on the fundamental quantum well properties.

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On page(s): 47
Conference Location :  Newark, DE
Print ISBN: 978-1-4244-1431-4
INSPEC Accession Number: 9684487
Digital Object Identifier :  10.1109/NUSOD.2007.4349017
Date of Current Version :   15 October 2007
Issue Date :   24-28 Sept. 2007





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