Abstract
We fabricated integrated inverter circuits directly on an elastic silicone membrane substrate. Using an all-dry process, amorphous silicon thin film transistors were prepared on platforms of stiff silicon nitride, and were interconnected to inverters with elastically stretchable gold metallization. With the elastomeric substrate, rigid device islands, thin film transistors, and elastic metal interconnects, all components for an elastically stretchable active-matrix backplane have been demonstrated and integrated
