Abstract
Organic thin-film transitors (OTFTs) were fabricated with channel lengths as small as 10 nm and an operating voltage of VDD=-0.3 V using e-beam lithography. For sub-200-nm channel lengths, scaling L downwards resulted in increased on-current, decreased Ion/Ioff ratio, VT-rolloff, and drain-induced barrier lowering. These trends are correlated with device topology, electrostatics, and thin-film morphology. Nanoscale OTFT are interesting both as a means of studying intrinsic electrical properties of organic materials and as a possible route toward increasing on-current in organic devices. This paper sheds light on many of the issues encountered when shrinking organic devices, providing insight into approaches for optimizing nanoscaled OTFT.
