This paper appears in:
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Date of Conference:
8-10 Dec. 2003
Author(s):
Peiqi Xuan
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Min She
;
Harteneck, B.
;
Liddle, A.
;
Bokor, J.
;
King, T.-J.
Page(s):
26.4.1 - 26.4.4
Product Type:
Conference Publications
FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.
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