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Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs

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5 Author(s)
Shirokov, M.S. ; Adv. Device Center, Raytheon RF Components, Andover, MA, USA ; Cherepko, S.V. ; Xiaohang Du ; Kwang, J.C.M.
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High-current effects in InGaP/GaAs heterojunction bipolar transistors (HBTs) were modeled and characterized. In addition to the self-heating effect, high currents were found to degrade large-signal performance mainly through Kirk and quasi-saturation effects. New formalisms in terms of base transit time and base-collector diffusion capacitance were used to modify the conventional Gummel-Poon model. This new model was verified against large-signal characteristics measured at 2 GHz. The validity of the new model for HBTs of different emitter geometry was also explored

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:50 ,  Issue: 4 )

Date of Publication:

Apr 2002

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