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Dielectric properties of SiCF film deposited by PECVD with low dielectric constants

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4 Author(s)
K. H. Kim ; Dept. of Mater. Eng. & Electr. Eng., Chung-Buk Nat. Univ., Cheongju, South Korea ; J. Lim ; W. S. Ryu ; J. S. Lee

Low dielectric constant fluorocarbonated siliceous films were deposited by PECVD (plasma enhanced chemical vapor deposition) using 2% SiH4/N2 and CF4 gases in the chamber with parallel plate electrode of 13.56 MHz RF. The effects of RF power, chamber pressure and gas composition on the deposition rate were studied and the morphology of the films was tested by AES, XPS, AFM and SEM. The dielectric constant of the film determined by the capacitance-voltage measurements was 2.3

Published in:

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Date of Conference:

22-25 Jun 1998