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The vertical cavity surface emitting laser diode (VCSEL) was fabricated using nonpolar GaN substrates. The direction of the polarization of the lasing was along a-axis. The emission wavelength was 412nm and the threshold current was 80mA using 10 μm aperture. The selective etching was used to make a short cavity of the VCSELS.
Date of Conference: June 30 2013-July 4 2013