By Topic

Wavelength Selectable Hybrid III–V/Si Laser Fabricated by Wafer Bonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Liepvre, A.L. ; III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA Leti, Palaiseau cedex, France ; Accard, A. ; Poingt, F. ; Jany, C.
more authors

This letter reports on a hybrid III–V on silicon arrayed waveguide grating laser, fabricated by a wafer bonding technique. The III–V materials provide the optical gain for the laser while an arrayed waveguide grating and Bragg reflectors on silicon on insulator complete the cavity for single mode selection and laser feedback. The laser shows a threshold current ${sim}{rm 40}~{rm mA}$, and a maximum coupled power to a single mode fiber of ${-}{rm 2.2}~{rm dBm}$. Independent lasing of five wavelength channels spaced by 392 GHz is demonstrated.

Published in:

Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 16 )