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Low temperature FDSOI devices, a key enabling technology for 3D sequential integration

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6 Author(s)
P. Batude ; CEA-leti, Minatec, Grenoble FRANCE ; B. Sklenard ; C. Xu ; B. Previtali
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Processing a high performance transistor at temperature lower than 650°C is the main challenge of 3D sequential integration. This paper shows how FDSOI architecture enables to overcome the issues observed in bulk devices, i.e: higher junction leakage and deactivation and allow performance matching of low temperature devices with their high temperature counterparts.

Published in:

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Date of Conference:

22-24 April 2013