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Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

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4 Author(s)
Shekhter, Pini ; Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel ; Eizenberg, Moshe ; Mehari, Shlomo ; Ritter, Dan

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Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of {100}InGaAs||{100}NiInGaAs; <011>InGaAs||[001]NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 3 )

Date of Publication:

May 2013

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