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Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

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7 Author(s)
Sun, Chi-Kuang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Keller, Stacia ; Tien-Lung Chiu ; Wang, G.
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We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT), carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at RT was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum-well (QW) interface. At low temperatures, the carrier recombination was found to be dominated by radiative recombination through a combination of free excitons, bound excitons, and free carriers. A decrease of radiative exciton lifetime was observed with decreased QW thickness

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:3 ,  Issue: 3 )