Cart (Loading....) | Create Account
Close category search window
 

Synthesis of diamond nanotips for enhancing the plasma illumination characteristics of capacitive-type plasma devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lou, Shiu-Cheng ; Department of Photonics Engineering, Yuan-Ze University, Chung-Li 32003, Taiwan ; Chen, Chulung ; Teng, Kuang-Yau ; Tang, Chien-Yao
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.4769973 

The enhancement of the plasma illumination characteristics of capacitive-type plasma devices (CP-devices) utilizing diamond-coated Si-nanotips as cathodes was systematically investigated. The enhanced electron field emission (EFE) properties of the diamond films resulted in improved plasma illumination characteristics of the devices. Microcrystalline diamond films grown using ultrananocrystalline diamond as a nucleation layer (MCD/UNCD) possessed a lower turn-on field for inducing the EFE process with a higher EFE current density and resulted in a better plasma illumination performance for the CP-devices compared with those made from MCD films grown directly on Si-substrates without the nucleation layer. Transmission electron microscopy revealed that, in a two-step microwave plasma enhanced chemical vapor deposition process, the second step altered the granular structure of the UNCD nuclear layer instead of growing a layer of large-grain diamond film on top of the UNCD nucleation layer, resulting in a duplex microstructure. The MCD/UNCD films contained large diamond aggregates evenly distributed among the ultrasmall-grain matrix, with the induction of a few layers of graphite, surrounding the large aggregates. The presence of the graphene-like phase is presumed to be the prime factor resulting in the superior EFE properties of the MCD/UNCD films and the better plasma illumination characteristics of the CP-devices.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 2 )

Date of Publication:

Mar 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.