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The performance of a novel Monolithic Microwave CMOS Distributed Oscillator is reported over a temperature range of -25°C to 75 °C for the first time, along with an analysis of its design characteristics and its temperature stability. The oscillator is stable over the entire temperature range of 100°C. The monolithic distributed oscillator (DO) is designed and fabricated in an industry standard 0.18 μ m CMOS process, using an n-FET-based traveling wave amplifier (TWA), coplanar waveguides (CPW), and a new coplanar interconnect structure called a 'folded CPW'. The measured loss of the “folded CPW” is 1.259 dB at 10 GHz. The distributed oscillator uses a novel architecture of Gm-varied gain cells and operates at a bias of 1.8 V. The measured oscillation frequency is 11.7 GHz with 6.1 dBm output power and the measured phase noise is -116.02 dBc/Hz at 1 MHz offset, which represent the best reported power and one of the best phase noise results for silicon DOs with temperature stability.
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on (Volume:20 , Issue: 7 )
Date of Publication: July 2012