Cart (Loading....) | Create Account
Close category search window
 

Effect of off-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Nam-Hyun Lee ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea ; Dohyun Baek ; Kang, Bongkoo

This paper investigates the degradation mechanism of a nanoscale n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) that is subjected to off-state stress at high temperature and the impact of stress-induced defects on threshold voltage Vth during drain relaxation. Experimental results indicate that acceptor-like interface traps Nit, positive oxide charges Qox, and neutral electron traps were generated by the off-state stress. Although the Nit generated by the off-state stress caused an increase in Vth, it did not influence Vth during drain relaxation at a positive gate voltage. Drain relaxation filled the neutral electron traps and neutralized positive Qox's, which increased Vth and decreased the off-current significantly. This new observation suggests that the off -state stress-induced defects in a nanoscaled nMOSFET should be seriously taken in evaluating the reliability of inverter circuits.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )

Date of Publication:

July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.