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Annealing investigations for high-k first n-channel In0.53Ga0.47As MOSFET development

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7 Author(s)
Djara, V. ; Tyndall Nat. Inst., Univ. Coll. Cork, Lee Maltings, Ireland ; Cherkaoui, K. ; Thomas, K. ; Pelucchi, E.
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We present the development of a high-k first n-channel InGaAs metal-oxide-semiconductor field effect transistors (MOSFETs) and the effect of annealing on the source/drain (S/D) sheet resistance (Rs) and the high-k gate oxide. Test structures based on the transfer length method (TLM) were used as part of a design of experiment (DOE) to optimize the S/D implant activation process. The optimized process was 715°C for 32 s, leading to a minimum Rs of (195.6 ± 3.4) Ω/d. Metal-oxide-semiconductor capacitors (MOSCAPs) with a 2 nm Al2O3/8 nm HfO2 gate oxide were annealed at 675°C, 700°C and 725°C for 30 s. Leakage current lower than 2.1×10-8 A/cm2 were obtained for electric fields of ~3 MV/cm and low frequency dispersion of capacitance in accumulation (<;1.7%) were obtained. Densities of interface states (DIT) were estimated using the conductance method. The output characteristics of a 5-μm gate length MOSFET annealed at 650°C is presented.

Published in:

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Date of Conference:

14-16 March 2011