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Band structures and optical gain of strained GaAsxP1-x-yNy/GaP quantum wells

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3 Author(s)
Zhu, Yuan-Hui ; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 ; Yu, Hong-Yu ; Fan, Wei-Jun

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3570630 

In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1-x-yNy/GaP quantum wells. The GaAsxP1-x-yNy could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 12 )

Date of Publication:

Mar 2011

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