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New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

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9 Author(s)
Jubong Park ; Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea ; Minseok Jo ; Seungjae Jung ; Joonmyoung Lee
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We proposed a new set/reset operation scheme to improve the switching uniformity of filament-type resistive memory. By controlling the magnitude of the sweep voltage in the pulse-sweep mode at each set and reset operation, similar resistance of a conducting filament in a low-resistance state and a homogeneously dissolved conducting filament in high resistance state were obtained continuously. As compared with a normal operation scheme involving a fixed voltage, our new operation scheme exhibits dramatically improved switching uniformity. By combining the new operation scheme with a gradual reset operation, we successfully achieved a stable multibit operation.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )