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We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (VT) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm2/V·s, a threshold voltage of 2.86 V, and an on-off ratio of 108.