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We study the effective metal gate work function (WFMeff) of different metal/high-κ gate stacks. Both capacitance versus voltage measurement and internal photo emission measurement were used, leading to a better understanding of the WFMeff variations. We demonstrate that these variations are related to two main process dependent parameters, a voltage drop at the high- κ/SiO2 interface and the metal work function. These two parameters are studied for various process conditions.