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CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device

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19 Author(s)
Severi, S. ; IMEC Interuniversity Microelectron. Center, Leuven, Belgium ; Heck, J. ; Chou, T.-K.A. ; Belov, N.
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A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10-10 Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009