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Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

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3 Author(s)
Gomez, Leonardo ; Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Hashemi, P. ; Hoyt, J.L.

Hole mobility and velocity are extracted from scaled strained-Si0.45Ge0.55 channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si0.45Ge0.55 channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for short-channel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of (110) uniaxial compressive strain to Si0.45Ge0.55 can result in a more substantial increase in velocity relative to relaxed Si.

Published in:

Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 11 )

Date of Publication:

Nov. 2009

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