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The influence of different device parameters on the electrical characteristics of n-channel and p-channel symmetric double-gate FinFETs is studied in this paper. Guidelines for enhancing the performance and suppressing the leakage currents are provided. A sub-threshold slope lower than 100 mV is achieved at the room temperature with fins thinner than half the gate length in a 32 nm FinFET technology. The maximum on-current to leakage current ratio of n-channel FinFETs at room temperature is achieved when the fin thickness and the gate-oxide thickness are 8 nm and 1.6 nm, respectively. Alternatively, the on-current to leakage currents ratio of p-channel FinFETs is maximized when the fin thickness and the gate-oxide thickness are 8 nm and 1.2 nm, respectively.