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Influence of the growth conditions on the ridge morphology during GaAs deposition on GaAs (001) patterned substrates

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4 Author(s)
Williams, R.S. ; Centre for Electronic Materials and Devices, Department of Chemistry, Imperial College London, London, SW7 2AZ, United Kingdom ; Ashwin, M.J. ; Jones, T.S. ; Neave, J.H.

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The formation of ridge structures on 〈100〉 aligned mesa stripes defined on GaAs (001) substrates has been investigated as a function of the substrate temperature, V/III flux ratio, and GaAs deposition quantity. Across the entire range of deposition conditions employed, the ridge structures were observed to form with {110} facets, indicating a similar growth mechanism in all cases. The {110} facet lengths on the ridge structures were accurately reproduced using a simple one-dimensional geometric model that included the effects of Ga adatom migration from the {110} facets to the upper ridge surface and resulting in an additional Ga flux. The results have important implications for the controlled growth of micron-scale ridge structures on patterned substrates. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 11 )