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We demonstrate that periodic exposure to zero bias during in situ hydrogenation of reverse‐biased p‐type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in n‐type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H+ to H- would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H‐related defects. In the p‐type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H+ into the bulk. © 1996 American Institute of Physics.