In many integrated circuit fabrication steps, it is important to be able to ensure that there is no native oxide on a silicon surface before the next layer is deposited. For example, when tungsten is deposited by chemical vapor deposition (CVD) by silicon/hydrogen reduction of WF6, attack of the silicon surface can be extensive (i.e., wormholes) if there is a native oxide layer.1 Similarly, growing epitaxial silicon on a single‐crystal substrate at a low temperature also depends critically on the removal of such a native oxide. The standard procedure for attempting to remove any surface oxide involves various wet etches, generally concluding with a dip in dilute HF. However, exposing a clean wafer to the atmosphere for even a short time allows some oxide to regrow, since silicon is an extremely reactive material. Accordingly, it would be desireable to develop an in situ procedure for cleaning of native oxide, and that will be the subject of this brief note.