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Reactive ion etching of silicon oxynitride formed by plasma‐enhanced chemical vapor deposition

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3 Author(s)
Ueno, Kazuyoshi ; Microelectronics Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229, Japan ; Kikkawa, T. ; Tokashiki, K.

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A variation in the reactive ion etch (RIE) rate of silicon oxynitride ( SiOxNy) films deposited by plasma‐enhanced chemical vapor deposition was studied by CHF3 RIE, CHF3+carbon mono‐oxide (CO) RIE and CF4 RIE. The source gas flow rate ratio (R=N2O/SiH4) during the SiOxNyfilm deposition was varied to obtain a film of different atomic composition. Etch rates decreased in the order of CF4 RIE, CHF3 RIE, and CHF3+CO RIE, and the etch selectivity of SiO2 over SiOxNy increased in the same order also. The fluorocarbon ( CFx) film deposited during a RIE process was analyzed by x‐ray photoelectron spectroscopy measurements. Etch rates are found to be correlated to both thickness and atomic composition of the CFx film. Carbon‐rich fluorocarbon films are found to be more resistive against RIE. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 4 )

Date of Publication:

Jul 1995

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